9955170336
Simplified typical cross-section of a UV-LED structure
(before electric contacts for the finał device are incorporated)
Ip-doped GaN cap +
p-doped AlGaN
3 nm AlGaN
• ~ 10 nm Quantum Wells
HEART OF THE DEVICE
^ n-doped AlGaN AIN/GaN BUFFER LAYER
SAPPHIRE SUBSTRATE UV-Light Emission
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