TDA7560

4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

SUPERIOR OUTPUT POWER CAPABILITY:

4 x 50W/4

Ω

MAX.

4 x 45W/4

Ω

EIAJ

4 x 30W/4

Ω

@ 14.4V, 1KHz, 10%

4 x 80W/2

Ω

MAX.

4 x 77W/2

Ω

EIAJ

4 x 55W/2

Ω

@ 14.4V, 1KHz, 10%

EXCELLENT 2

Ω

DRIVING CAPABILITY

HI-FI CLASS DISTORTION
LOW OUTPUT NOISE
ST-BY FUNCTION
MUTE FUNCTION
AUTOMUTE AT MIN. SUPPLY VOLTAGE DE-

TECTION

LOW EXTERNAL COMPONENT COUNT:

– INTERNALLY FIXED GAIN (26dB)
– NO EXTERNAL COMPENSATION
– NO BOOTSTRAP CAPACITORS

ON BOARD 0.35A HIGH SIDE DRIVER

PROTECTIONS:

OUTPUT SHORT CIRCUIT TO GND, TO V

S

,

ACROSS THE LOAD

VERY INDUCTIVE LOADS
OVERRATING CHIP TEMPERATURE WITH

SOFT THERMAL LIMITER

OUTPUT DC OFFSET DETECTION

LOAD DUMP VOLTAGE
FORTUITOUS OPEN GND
REVERSED BATTERY
ESD

DESCRIPTION
The TDA7560 is a breakthrough BCD (Bipolar /
CMOS / DMOS) technology class AB Audio
Power Amplifier in Flexiwatt 25 package designed
for high power car radio. The fully complementary
P-Channel/N-Channel output structure allows a
rail to rail output voltage swing which, combined
with high output current and minimised saturation
losses sets new power references in the car-radio
field, with unparalleled distortion performances.

December 2001



ORDERING NUMBER: TDA7560

IN1

0.1

µ

F

MUTE

ST-BY

IN2

0.1

µ

F

OUT1+

OUT1-

OUT2+

OUT2-

PW-GND

IN3

0.1

µ

F

IN4

0.1

µ

F

OUT3+

OUT3-

OUT4+

OUT4-

PW-GND

PW-GND

PW-GND

D94AU158C

AC-GND

0.47

µ

F

47

µ

F

SVR

TAB

S-GND

Vcc1

Vcc2

100nF

470

µ

F

HSD/V

OFF

DET

HSD

BLOCK AND APPLICATION DIAGRAM

FLEXIWATT25

MULTIPOWER BCD TECHNOLOGY

MOSFET OUTPUT POWER STAGE

1/10

D94AU159A

TAB

P-GND2

OUT2-

ST-BY

OUT2+

V

CC

OUT1-

P-GND1

OUT1+

SVR

IN1

IN2

S-GND

IN4

IN3

AC-GND

OUT3+

P-GND3

OUT3-

V

CC

OUT4+

MUTE

OUT4-

P-GND4

HSD

1

25

PIN CONNECTION (Top view)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V

CC

Operating Supply Voltage

18

V

V

CC (DC)

DC Supply Voltage

28

V

V

CC (pk)

Peak Supply Voltage (t = 50ms)

50

V

I

O

Output Peak Current:
Repetitive (Duty Cycle 10% at f = 10Hz)
Non Repetitive (t = 100

µ

s)

9

10

A
A

P

tot

Power dissipation, (T

case

= 70

°

C)

80

W

T

j

Junction Temperature

150

°

C

T

stg

Storage Temperature

– 55 to 150

°

C

THERMAL DATA

Symbol

Parameter

Value

Unit

R

th j-case

Thermal Resistance Junction to Case

Max.

1

°

C/W

TDA7560

2/10

ELECTRICAL CHARACTERISTICS (V

S

= 13.2V; f = 1KHz; R

g

= 600

Ω

; R

L

= 4

Ω

; T

amb

= 25

°

C;

Refer to the test and application diagram, unless otherwise specified.)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

I

q1

Quiescent Current

R

L

=

∞

120

200

320

mA

V

OS

Output Offset Voltage

Play Mode

±

60

mV

dV

OS

During mute ON/OFF output
offset voltage

±

60

mV

G

v

Voltage Gain

25

26

27

dB

dG

v

Channel Gain Unbalance

±

1

dB

P

o

Output Power

V

S

= 13.2V; THD = 10%

V

S

= 13.2V; THD = 1%

V

S

= 14.4V; THD = 10%

V

S

= 14.4V; THD = 1%

23
16
28
20

25
19
30
23

W
W
W
W

V

S

= 13.2V; THD = 10%, 2

Ω

V

S

= 13.2V; THD = 1%, 2

Ω

V

S

= 14.4V; THD = 10%, 2

Ω

V

S

= 14.4V; THD = 1%, 2

Ω

42
32
50
40

45
34
55
43

W
W
W
W

P

o EIAJ

EIAJ Output Power (*)

V

S

= 13.7V; R

L

= 4

Ω

V

S

= 13.7V; R

L

= 2

Ω

41

45
77

W
W

P

o max.

Max. Output Power (*)

V

S

= 14.4V; R

L

= 4

Ω

V

S

= 14.4V; R

L

= 2

Ω

50
80

W
W

THD

Distortion

P

o

= 4W

P

o

= 15W; R

L

= 2

Ω

0.006
0.015

0.05
0.07

%
%

e

No

Output Noise

”A” Weighted
Bw = 20Hz to 20KHz

35
50

50
70

µ

V

µ

V

SVR

Supply Voltage Rejection

f = 100Hz; V

r

= 1Vrms

50

70

dB

f

ch

High Cut-Off Frequency

P

O

= 0.5W

100

300

KHz

R

i

Input Impedance

80

100

120

K

Ω

C

T

Cross Talk

f = 1KHz

P

O

= 4W

f = 10KHz P

O

= 4W

60

70
60

–
–

dB
dB

I

SB

St-By Current Consumption

V

St-By

= 1.5V

75

µ

A

I

pin4

St-by pin Current

VSt-By = 1.5V to 3.5V

±

10

µ

A

V

SB out

St-By Out Threshold Voltage

(Amp: ON)

3.5

V

V

SB in

St-By in Threshold Voltage

(Amp: OFF)

1.5

V

A

M

Mute Attenuation

P

Oref

= 4W

80

90

dB

V

M out

Mute Out Threshold Voltage

(Amp: Play)

3.5

V

V

M in

Mute In Threshold Voltage

(Amp: Mute)

1.5

V

V

AM in

V

S

Automute Threshold

(Amp: Mute)
Att

≥

80dB; P

Oref

= 4W

(Amp: Play)
Att < 0.1dB; P

O

= 0.5W

6.5

7

7.5

8

V

V

I

pin22

Muting Pin Current

V

MUTE

= 1.5V

(Sourced Current)

7

12

18

µ

A

V

MUTE

= 3.5V

-5

18

µ

A

HSD SECTION

V

dropout

Dropout Voltage

I

O

= 0.35A; V

S

= 9 to 16V

0.25

0.6

V

I

prot

Current Limits

400

800

mA

OFFSET DETECTOR SECTION

V

M_ON

Mute Voltage for DC offset
detection enabled

V

stby

= 5V

8

V

V

M_OFF

6

V

V

OFF

Detected Differential Output Offset

V

stby

= 5V; V

mute

= 8V

±

2

±

3

±

4

V

V

25 _T

Pin 25 Voltage for Detection =
TRUE

V

stby

= 5V; V

mute

= 8V

V

OFF

>

±

4V

0

1.5

V

V

25 _F

Pin 25 Voltage for Detection =
FALSE

V

stby

= 5V; V

mute

= 8V

V

OFF

>

±

2V

12

V

(*) Saturated square wave output.

TDA7560

3/10

IN1

0.1

µ

F

C9

1

µ

F

IN2

C2 0.1

µ

F

OUT1

OUT2

IN3

C3 0.1

µ

F

IN4

C4 0.1

µ

F

OUT3

OUT4

D95AU335B

C5

0.47

µ

F

C6

47

µ

F

SVR

TAB

Vcc1-2

Vcc3-4

C8

0.1

µ

F

C7

2200

µ

F

C10

1

µ

F

ST-BY

R1

10K

R2

47K

MUTE

C1

14

15

12

11

22

4

13

S-GND

16

10

25

1

HSD

6

20

9

8

7

5

2

3

17

18

19

21

24

23

Figure 1: Standard Test and Application Circuit

TDA7560

4/10

Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale)

COMPONENTS &
TOP COPPER LAYER

BOTTOM COPPER LAYER

TDA7560

5/10

8

10

12

14

16

18

Vs (V)

140

160

180

200

220

240

Id (mA)

Vi = 0

RL = 4 Ohm

Figure 3. Quiescent current vs. supply

voltage.

8

9

10

11

12

13

14

15

16

17

18

Vs (V)

5

10

15

20

25

30

35

40

45

50

55

60

65

70

75

80

Po (W)

RL= 4 Ohm

f= 1 KHz

THD= 10 %

THD= 1 %

Po-max

Figure 4. Output power vs. supply voltage.

8

9

10 11 12 13 14 15 16 17 18

Vs (V)

10

20

30

40

50

60

70

80

90

100

110

120

130

Po(W)

RL=2 Ohm

f=1 KHz

THD=10%

THD=1 %

Po-max

Figure 5. Output power vs. supply voltage.

0.1

1

10

Po (W)

0.001

0.01

0.1

1

10

THD(%)

f = 10 KHz

RL= 4 Ohm

f = 1 KHz

Vs= 14.4 V

Figure 6. Distortion vs. output Power

0.1

1

10

Po (W)

0.001

0.01

0.1

1

10

THD(%)

f = 10 KHz

RL= 2 Ohm

f = 1 KHz

Vs=14.4 V

Figure 7. Distortion vs. output power

10

100

1000

10000

f (Hz)

0.001

0.01

0.1

1

10

THD (%)

Po =4 W

RL =4 Ohm

Vs = 14.4 V

Figure 8. Distortion vs. frequency.

TDA7560

6/10

10

100

1000

10000

f (Hz)

20

30

40

50

60

70

80

90

CROSSTALK(dB)

Po= 4 W

RL= 4 Ohm

Rg= 600 Ohm

Figure 10. Crosstalk vs. frequency.

10

100

1000

10000

f (Hz)

20

30

40

50

60

70

80

90

100

SVR(dB)

Vripple= 1 Vrms

Rg= 600 Ohm

Figure 11. Supply voltage rejection vs. fre-

quency.

5

6

7

8

9

10

Vs (V)

0

-20

-40

-60

-80

-100

OUT ATTN (dB)

RL= 4 Ohm

Po= 4 W ref.

Figure 12. Output attenuation vs. supply

voltage.

1

10

100

1000

10000

100000

Rg (Ohm)

20

30

40

50

60

70

80

90

100

110

120

130

En (uV)

Vs= 14.4V

RL= 4 Ohm

”A” wgtd

22-22KHz lin.

Figure 13. Output noise vs. source resistance.

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Po (W)

0

10

20

30

40

50

60

70

80

90

Ptot (W)

0

10

20

30

40

50

60

70

80

90

n (%)

Vs=13.2V

RL=4 x 4 Ohm

f= 1 KHz SINE

n

Ptot

Figure 14. Power dissipation & efficiency vs.

output power (sine-wave operation)

10

100

1000

10000

f (Hz)

0.001

0.01

0.1

1

10

THD(%)

Po= 8 W

RL= 2 Ohm

Vs =14.4 V

Figure 9. Distortion vs. frequency.

TDA7560

7/10

0

2

4

6

8

10

Po (W)

5

10

15

20

25

30

35

40

45

50

55

60

Ptot (W)

Vs= 13.2V

RL= 4 x 2 Ohm

CLIP START

GAUSSIAN NOISE

Figure 16. Power dissipation vs. output power

(Music/Speech Simulation)

0

1

2

3

4

5

6

Po (W)

5

10

15

20

25

30

Ptot (W)

Vs= 13.2V

RL= 4 x 4 Ohm

CLIP START

GAUSSIAN NOISE

Figure 15. Power dissipation vs. ouput power

(Music/Speech Simulation)

DC OFFSET DETECTOR

The TDA7560 integrates a DC offset detector to
avoid that an anomalous DC offset on the inputs
of the amplifier may be multiplied by the gain and
result in a dangerous large offset on the outputs
which may lead to speakers damage for over-
heating.
The feature is enabled by the MUTE pin and
works with the amplifier umuted and with no sig-
nal on the inputs. The DC offset detection is sig-
naled out on the HSD pin.

APPLICATION HINTS (ref. to the circuit of fig. 1)
SVR
Besides its contribution to the ripple rejection, the
SVR capacitor governs the turn ON/OFF time se-
quence and, consequently, plays an essential role
in the pop optimization during ON/OFF tran-
sients.To conveniently serve both needs, ITS
MINIMUM RECOMMENDED VALUE IS 10

µ

F.

INPUT STAGE

The TDA7560’s inputs are ground-compatible and
can stand very high input signals (

±

8Vpk) without

any performances degradation.
If the standard value for the input capacitors
(0.1

µ

F) is adopted, the low frequency cut-off will

amount to 16 Hz.

STAND-BY AND MUTING

STAND-BY and MUTING facilities are both
CMOS-COMPATIBLE. In absence of true CMOS
ports or microprocessors, a direct connection to
Vs of these two pins is admissible but a 470
kOhm

equivalent

resistance

should

present

between the power supply and the muting and
stand-by pins.
R-C cells have always to be used in order to
smooth down the transitions for preventing any
audible transient noises.

About the stand-by, the time constant to be as-
signed in order to obtain a virtually pop-free tran-
sition has to be slower than 2.5V/ms.

HEATSINK DEFINITION

Under normal usage (4 Ohm speakers) the
heatsink’s thermal requirements have to be de-
duced from fig. 15, which reports the simulated
power dissipation when real music/speech pro-
grammes are played out. Noise with gaussian-
distributed amplitude was employed for this simu-
lation. Based on that, frequent clipping occurence
(worst-case) will cause Pdiss = 26W. Assuming
Tamb = 70

°

C and T

CHIP

= 150

°

C as boundary

conditions, the

heatsink’s thermal resistance

should be approximately 2

°

C/W. This would avoid

any thermal shutdown occurence even after long-
term and full-volume operation.

TDA7560

8/10

Flexiwatt25

DIM.

mm

inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.45

4.50

4.65

0.175

0.177

0.183

B

1.80

1.90

2.00

0.070

0.074

0.079

C

1.40

0.055

D

0.75

0.90

1.05

0.029

0.035

0.041

E

0.37

0.39

0.42

0.014

0.015

0.016

F (1)

0.57

0.022

G

0.80

1.00

1.20

0.031

0.040

0.047

G1

23.75

24.00

24.25

0.935

0.945

0.955

H (2)

28.90

29.23

29.30

1.138

1.150

1.153

H1

17.00

0.669

H2

12.80

0.503

H3

0.80

0.031

L (2)

22.07

22.47

22.87

0.869

0.884

0.904

L1

18.57

18.97

19.37

0.731

0.747

0.762

L2 (2)

15.50

15.70

15.90

0.610

0.618

0.626

L3

7.70

7.85

7.95

0.303

0.309

0.313

L4

5

0.197

L5

3.5

0.138

M

3.70

4.00

4.30

0.145

0.157

0.169

M1

3.60

4.00

4.40

0.142

0.157

0.173

N

2.20

0.086

O

2

0.079

R

1.70

0.067

R1

0.5

0.02

R2

0.3

0.12

R3

1.25

0.049

R4

0.50

0.019

V

5

°

(Typ.)

V1

3

°

(Typ.)

V2

20

°

(Typ.)

V3

45

°

(Typ.)

(1): dam-bar protusion not included
(2): molding protusion included

H3

R4

G

V

G1

L2

H1

H

F

M1

L

FLEX25ME

V3

O

L3

L4

H2

R3

N

V2

R

R2

R2

C

B

L1

M

R1

L5

R1

R1

E

D

A

V

V1

V1

OUTLINE AND

MECHANICAL DATA

TDA7560

9/10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parti es which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics



2001 STMicroelectronics – Printed in Italy – All Rights Reserved

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TDA7560

10/10