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TDA7266D
May 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
■
WIDE SUPPLY VOLTAGE RANGE (3.5 - 12V)
■
OUTPUT POWER
5+5W @THD = 10%, R
L
= 8
Ω
, V
CC
= 9.5V
■
SINGLE SUPPLY
■
MINIMUM EXTERNAL COMPONENTS
– NO SVR CAPACITOR
– NO BOOTSTRAP
– NO BOUCHEROT CELLS
– INTERNALLY FIXED GAIN
■
STAND-BY & MUTE FUNCTIONS
■
SHORT CIRCUIT PROTECTION
■
THERMAL OVERLOAD PROTECTION
DESCRIPTION
The TDA7266D is a dual bridge amplifier specially
designed for LCD TV/Monitor, PC Motherboard, TV
and Portable Audio applications.
PowerSO20 Slug Down
ORDERING NUMBER: TDA7266D
PRELIMINARY DATA
5W+5W DUAL BRIDGE AMPLIFIER
TEST AND APPLICATION CIRCUIT
2
5
7
Vref
ST-BY
JP1
9
IN1
C3 0.22
µ
F
VCC
15
6
D02AU1407
+
-
-
+
OUT1+
OUT1-
19
16
14
MUTE
8
IN2
C5 0.22
µ
F
+
-
-
+
OUT2+
OUT2-
20
13
S-GND
PW-GND
C1
470
µ
F
C2
100nF
C7
100nF
1
10
11
C4
10
µ
F
R1
47K
R2
47K
C6
1
µ
F
R3 10K
R4 10K
+5V
TECHNOLOGY BI20II
TDA7266D
2/13
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
Notes: 1. See Application note AN668, available on WEB FR4 with 15 via holes and ground layer.
PIN CONNECTION
Symbol
Parameter
Value
Unit
V
s
Supply Voltage
20
V
I
O
Output Peak Current (internally limited)
1.5
A
P
tot
Total Power Dissipation (T
amb
= 70°C
25
W
T
op
Operating Temperature
0 to 70
°C
T
stg,
T
j
Storage and Junction Temperature
-40 to 150
°C
Symbol
Parameter
Value
Unit
R
th j-case
Thermal Resistance Junction-case
2.1
°C/W
R
th j-amb
Thermal Resistance Junction-ambient (on recomended PCB) note1
15
°C/W
PW GND
ST BY
N.C.
N.C.
N.C.
V
CC
OUT1-
IN1
MUTE
OUT1+
PW GND
10
8
9
7
6
5
4
3
2
13
14
15
16
17
19
18
20
12
1
11
PW GND
D02AU1408
SGND
IN2-
OUT2-
V
CC
N.C.
N.C.
OUT2+
PW GND
3/13
TDA7266D
ELECTRICAL CHARACTERISTCS (Refer to test circuit) V
CC
= 9.5V, R
L
= 8
Ω
, f = 1KHz, T
amb
= 25°C unless
otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
CC
Supply Range
3.5
9.5
12
V
I
q
Total Quiescent Current
50
60
mA
V
OS
Output Offset Voltage
120
mV
P
O
Output Power
THD 10%
4.3
5
W
THD
Total Harmonic Distortion
P
O
= 1W
0.05
0.2
%
P
O
= 0.1W to 2W
f = 100Hz to 15KHz
1
%
SVR
Supply Voltage Rejection
f = 100Hz, VR =0.5V
40
56
dB
CT
Crosstalk
46
60
dB
A
MUTE
Mute Attenuation
60
80
dB
T
w
Thermal Threshold
150
°C
G
V
Closed Loop Voltage Gain
25
26
27
dB
∆
G
V
Voltage Gain Matching
0.5
dB
R
i
Input Resistance
25
30
K
Ω
VT
MUTE
Mute Threshold
for V
CC
> 6.4V; Vo = -30dB
2.3
2.9
4.1
V
for V
CC
< 6.4V; Vo = -30dB
V
CC
/2
-1
V
CC
/2
-0.75
V
CC
/2
-0.5
V
VT
ST-BY
St-by Threshold
0.8
1.3
1.8
V
I
ST-BY
St-by Current V6 = GND
100
µ
A
e
N
Total Output Voltage
A Curve
150
µ
V
TDA7266D
4/13
APPLICATIVE SUGGESTIONS
STAND-BY AND MUTE FUNCTIONS
(A) Microprocessor Application
In order to avoid annoying "Pop-Noise" during Turn-On/Off transients, it is necessary to guarantee the right St-
by and mute signals sequence.It is quite simple to obtain this function using a microprocessor (Fig. 1 and 2).
At first St-by signal (from
µ
P) goes high and the voltage across the St-by terminal (Pin 9) starts to increase ex-
ponentially. The external RC network is intended to turn-on slowly the biasing circuits of the amplifier, this to
avoid "POP" and "CLICK" on the outputs.
When this voltage reaches the St-by threshold level, the amplifier is switched-on and the external capacitors in
series to the input terminals (C1, C3) start to charge.
It's necessary to mantain the mute signal low until the capacitors are fully charged, this to avoid that the device
goes in play mode causing a loud "Pop Noise" on the speakers.
A delay of 100-200ms between St-by and mute signals is suitable for a proper operation.
Figure 1. Microprocessor Application
2
5
7
Vref
ST-BY
9
IN1
C1 0.22
µ
F
VCC
15
6
D02AU1409
+
-
-
+
OUT1+
OUT1-
19
16
14
MUTE
8
IN2
C3 0.22
µ
F
+
-
-
+
OUT2+
OUT2-
20
13
S-GND
PW-GND
C5
470
µ
F
C6
100nF
R1 10K
C2
10
µ
F
µ
P
R2 10K
C4
1
µ
F
1
10
11
5/13
TDA7266D
Figure 2. Microprocessor Driving Signals
B) Low Cost Application
In low cost applications where the mP is not present, the suggested circuit is shown in fig.3.
The St-by and mute terminals are tied together and they are connected to the supply line via an external voltage
divider.
The device is switched-on/off from the supply line and the external capacitor C4 is intended to delay the St-by
and mute threshold exceeding, avoiding "Popping" problems.
So to avoid any popping or clicking sond, it is important to clock:
a Correct Sequence: At turn-ON, the Stand-by must be removed at first, then the Mute must be re-
leased after a delay of about 100-200ms. On the contrary at turn-OFF the Mute must be activated
as first and then the Stand-by.
With the values suggested in the Application circuit the right operation is guaranteed.
b Correct Threshold Voltages: In order to avoid that due to the spread in the internal thresholds (see
the above limits) a wrong external voltage causes uncertain commutations for the two functions we
suggest to use the following values:
Mute for Vcc>6.4V
: VT = 2.3V
Mute for Vcc<6.4V
: VT = Vcc/2 - 1
Stand-by
: VT = 0.8V
+V
S
(V)
V
IN
(mV)
V
ST-BY
pin 9
I
q
(mA)
ST-BY
MUTE
PLAY
MUTE
ST-BY
+18
1.8
0.8
V
MUTE
pin 8
4.1
2.3
OFF
OFF
D02AU1411
V
OUT
(V)
2.9
1.3
TDA7266D
6/13
Figure 3. Stand-alone low-cost Application
PCB Layout and External Components:
Regarding the PCB layout care must be taken for three main subjects:
c) Signal and Power Gnd separation
d) Dissipating Copper Area
e) Filter Capacitors positioning
)Signal and Power Gnd separation:
c To the Signal GND must be referred the Audio Input Signals, the Mute and Stand-by Voltages and
the device PIN.13. This Gnd path must be as clean as possible in order to improve the device
THD+Noise and to avoid spurious oscillations across the speakers.
The Power GND is directly connected to the Output power Stage transistors (Emitters) and is crossed
by large amount of current, this path is also used in this device to dissipate the heating generated (no
needs of external heatsinker).
Referring to the typical application circuit, the separation between the two GND paths must be ob-
tained connecting them separately (star routing) to the bulk
Electrolithic capacitor C1 (470
µ
F).
Regarding the Power Gnd dimensioning we have to consider the Dissipated Power the Thermal Pro-
tection Threshold and the Package thermal Characteristics.
2
5
7
Vref
ST-BY
9
IN1
C3 0.22
µ
F
VCC
15
6
D02AU1410
+
-
-
+
OUT1+
OUT1-
19
16
14
MUTE
8
IN2
C5 0.22
µ
F
+
-
-
+
OUT2+
OUT2-
20
13
S-GND
PW-GND
C1
470
µ
F
C2
100nF
C7
100nF
R1
47K
C4
10
µ
F
R2
47K
1
10
11
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TDA7266D
d Dissipating Copper Area:
Dissipated Power:
The max dissipated power happens for a THD near 1% and is given by the formula:
This gives for: Vcc = 9.5V, Rl = 8
Ω
,Iq = 50mA a dissipated power of Pd = 5W.
Thermal Protection:
The thermal protection threshold is placed at a junction temperature of 150°C.
Package Thermal Characteristics:
The thermal resistance Junction to Ambient obtainable with a GND copper Area of 3x3 cm and with 16 via
holes (see picture) is about 15°C/W. This means that with the above mentioned max dissipated Power (Pd=5W)
we can expect a 75°C, this gives a safety margin before the thermal protection intervention in the consumer
environments where a 50°C ambient is specified as maximum
The Thermal constraints determine the max supply voltage that can be used for the different Load Impedances,
this in order to avoid the thermal Protection Intervention.
The max. dissipated power must be not in excess of 5W , this at turns gives the following operating supply volt-
ages:
e Filter Capacitors Positioning:
The two Ceramic capacitors C2/C7 (100nF) must be placed as close as possible
respectively to the two Vcc pins ( 6 - 15) in order to avoid the possibiltiy of oscillations arising on the
output Audio signals.
Package Informations:
You can find a complete description for the PowerSO package into the APPLICATION NOTE AN668 available
on web.
Here we want to focalize the attention only on the the Dissipating elements and ground layer.
Load (Ohm)
Supply Voltage (V)
4
6.5
6
8.5
8
9.5
16
14
P
dm ax W
( )
2
V
C C
2
π
2
Rl
2
------
--------------
I
q
V
CC
+
⋅
=
TDA7266D
8/13
Considering the dissipated power involved in the TDA7266D application that is in the range of 5W, as explained
in a previous section, we suggest via holes ( see fig. 4).
Using via holes a more direct thermal path is obtained from the slug to the ground layer.The number of vias is
chosen accordingly to the desired performance (in our demonstration board we use 15 vias).
In fig.4 is shown as an example the footprint to be used to create the vias.
Figure 4.
The above metioned mounting solution is enough to dissipate the power involved
In the most part of the application using the TDA7266D.
If necessary a further improvement in the Rth J-Ambient can be obtained as shown in fig.5 where the
PowerSO20 is soldered onto a via hole structure with a metal plate glued on the opposite side of the board.
Figure 5. Mounting on epoxy FR4 using via Holes for heat transfer and external metal plate
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TDA7266D
Figure 6. Distortion vs Frequency
Figure 7. Gain vs Frequency
Figure 8. Mute Attenuation vs Vpin.8
Figure 9. Stand-By attenuation vs Vpin 9
Figure 10. Quiescent Current vs Supply Voltage
Figure 11. Total Power Dissipation & Efficiency
vs Pout
0.010
0.1
1
10
100
1k
10k
20k
THD(%)
Vcc = 9.5 V
Rl = 8 ohm
Pout = 100mW
Pout = 2W
frequency (Hz)
-5.000
-4.000
-3.000
-2.000
-1.000
0.0
1.0000
2.0000
3.0000
4.0000
5.0000
10
100
1k
10k
100k
Level(dBr)
Vcc = 9.5V
Rl = 8 ohm
Pout = 1W
frequency (Hz)
1
1.5
2
2.5
3
3.5
4
4.5
5
0
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Attenuation (dB)
Vpin.6(V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
Attenuation (dB)
Vpin.7 (V)
3
4
5
6
7
8
9
10
11
12
30
35
40
45
50
55
60
65
70
Iq (mA)
Vsupply(V)
0
1
2
3
4
5
0
1
2
3
4
5
6
10
20
30
40
50
60
70
Pd(W)
Eff(%)
2 X Pout (W)
Vcc= 9.5V
Rl = 8 ohm
f=1KHZ
2 Channels
0
1
2
3
4
5
0
1
2
3
4
5
6
10
20
30
40
50
60
70
Pd(W)
Eff(%)
2 X Pout (W)
Vcc= 9.5V
Rl = 8 ohm
f=1KHZ
2 Channels
TDA7266D
10/13
Figure 12. THD+N vs Output Power
Figure 13. THD+N vs Output Power
10
0.1
0.2
0.5
1
2
5
THD(%)
100m
6
200m 300m 500m700m 1
2
3
4 5
Pout(W)
Vcc=9.5V
Rl=8ohm
f=1KHz
10
0.1
0.2
0.5
1
2
5
THD(%)
100m
6
200m 300m 500m700m 1
2
3
4 5
Pout(W)
Vcc=9.5V
Rl=8ohm
f=1KHz
0.01
10
0.02
0.05
0.1
0.2
0.5
1
2
5
THD(%)
100m
5
200m 300m
500m 700m
1
2
3
4
Pout(W)
Vcc=12V
Rl=16 ohm
f = 1KHz
0.01
10
0.02
0.05
0.1
0.2
0.5
1
2
5
THD(%)
100m
5
200m 300m
500m 700m
1
2
3
4
Pout(W)
Vcc=12V
Rl=16 ohm
f = 1KHz
Figure 14. PC Board Component Layout
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TDA7266D
Figure 15. Evaluation Board Top Layer Layout
Figure 16. Evaluation Board Bottom Layer Layout
TDA7266D
12/13
OUTLINE AND
MECHANICAL DATA
e
a2
A
E
a1
PSO20MEC
DETAIL A
T
D
1
10
11
20
E1
E2
h x 45
DETAIL A
lead
slug
a3
S
Gage Plane
0.35
L
DETAIL B
R
DETAIL B
(COPLANARITY)
G
C
- C -
SEATING PLANE
e3
b
c
N
N
H
BOTTOM VIEW
E3
D1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
3.6
0.142
a1
0.1
0.3
0.004
0.012
a2
3.3
0.130
a3
0
0.1
0.000
0.004
b
0.4
0.53
0.016
0.021
c
0.23
0.32
0.009
0.013
D (1)
15.8
16
0.622
0.630
D1
9.4
9.8
0.370
0.386
E
13.9
14.5
0.547
0.570
e
1.27
0.050
e3
11.43
0.450
E1 (1)
10.9
11.1
0.429
0.437
E2
2.9
0.114
E3
5.8
6.2
0.228
0.244
G
0
0.1
0.000
0.004
H
15.5
15.9
0.610
0.626
h
1.1
0.043
L
0.8
1.1
0.031
0.043
N
8˚ (typ.)
S
8˚ (max.)
T
10
0.394
(1) “D and E1” do not include mold flash or protusions.
- Mold flash or protusions shall not exceed 0.15mm (0.006”)
- Critical dimensions: “E”, “G” and “a3”.
PowerSO20
0056635
JEDEC MO-166
Weight:
1.9gr
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
©
2003 STMicroelectronics - All Rights Reserved
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TDA7266D