DATA SHEET

Product specification
Supersedes data of 1996 Sep 30

1998 Jun 24

DISCRETE SEMICONDUCTORS

BAS81; BAS82; BAS83
Schottky barrier diodes

lfpage

M3D121

1998 Jun 24

2

Philips Semiconductors

Product specification

Schottky barrier diodes

BAS81; BAS82; BAS83

FEATURES

•

Low forward voltage

•

High breakdown voltage

•

Guard ring protected

•

Hermetically-sealed small SMD
package

•

Low diode capacitance.

APPLICATIONS

•

Ultra high-speed switching

•

Voltage clamping

•

Protection circuits

•

Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an
integrated protection ring against
static discharges. This surface
mounted diode is encapsulated in a

hermetically sealed SOD80C glass
SMD package with tin-plated metal
discs at each end. It is suitable for
“automatic placement” and as such it
can withstand immersion soldering.

Fig.1 Simplified outline (SOD80C), pin configuration and symbol.

handbook, halfpage

MAM190

k

a

Cathode indicated by a grey band.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

R

continuous reverse voltage

BAS81

−

40

V

BAS82

−

50

V

BAS83

−

60

V

I

F

continuous forward current

−

30

mA

I

FRM

repetitive peak forward current

t

p

≤

1 s;

δ ≤

0.5

−

150

mA

I

FSM

non-repetitive peak forward current

t

p

= 1 s

−

500

mA

T

stg

storage temperature

−

65

+150

°

C

T

j

junction temperature

−

125

°

C

1998 Jun 24

3

Philips Semiconductors

Product specification

Schottky barrier diodes

BAS81; BAS82; BAS83

ELECTRICAL CHARACTERISTICS

T

amb

= 25

°

C unless otherwise specified.

Note

1. Pulsed test: t

p

= 300

µ

s;

δ

= 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD80 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

V

F

forward voltage

see Fig.2

I

F

= 0.1 mA

330

mV

I

F

= 1 mA

410

mV

I

F

= 15 mA

1

V

I

R

reverse current

V

R

= V

Rmax

; see Fig.3

200

nA

C

d

diode capacitance

f = 1 MHz; V

R

= 2 V; see Fig.4

1.6

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-a

thermal resistance from junction to ambient

note 1

320

K/W

1998 Jun 24

4

Philips Semiconductors

Product specification

Schottky barrier diodes

BAS81; BAS82; BAS83

GRAPHICAL DATA

Fig.2

Forward current as a function of forward
voltage; typical values.

handbook, halfpage

1.0

0

10

I

F

2

MGC690

10

(mA)

1

(1) (2) (3)

10

−

1

0.2

0.4

0.6

0.8

V

F

(V)

(1) (2) (3)

(1) T

amb

= 85

°

C.

(2) T

amb

= 25

°

C.

(3) T

amb

=

−

40

°

C.

Fig.3

Reverse current as a function of reverse
voltage; typical values.

handbook, halfpage

10

4

10

(nA)

I

R

3

10

2

10

10

−

2

10

−

1

60

20

0

MGC689

40

V

R

(V)

1

(1)

(2)

(3)

(1) T

amb

= 85

°

C.

(2) T

amb

= 25

°

C.

(3) T

amb

=

−

40

°

C.

Fig.4

Diode capacitance as a function of reverse
voltage; typical values.

f = 1 MHz.

0

0.5

1.0

1.5

2.0

0

15

30

45

60

MGC688

Cd

(pF)

V (V)

R

1998 Jun 24

5

Philips Semiconductors

Product specification

Schottky barrier diodes

BAS81; BAS82; BAS83

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

Note

1. The marking band indicates the cathode.

SOD80C

100H01

97-06-20

Hermetically sealed glass surface mounted package; 2 connectors

SOD80C

UNIT

D

mm

1.60
1.45

3.7
3.3

0.3

H

L

DIMENSIONS (mm are the original dimensions)

H

D

L

L

(1)

0

1

2 mm

scale

k

a

1998 Jun 24

6

Philips Semiconductors

Product specification

Schottky barrier diodes

BAS81; BAS82; BAS83

NOTES

1998 Jun 24

7

Philips Semiconductors

Product specification

Schottky barrier diodes

BAS81; BAS82; BAS83

NOTES

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© Philips Electronics N.V. 1998

SCA60

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Printed in The Netherlands

115104/00/04/pp8

Date of release: 1998 Jun 24

Document order number:

9397 750 04038