GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers

QUICK REFERENCE DATA

LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE

= 0V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

600

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

P

tot

Total power dissipation

T

mb

25

-

50

W

V

CEsat

Collector-emitter saturation voltage

I

C

= 4.0A; I

B

= 0.8A

-

5

V

I

csat

Collector saturation current

f = 16KHz

4.5

-

A

V

F

Diode forward voltage

I

F

= 4.5A

1.6

2.0

V

t

f

Fall time

I

Csat

= 4.0A; f = 16KHz

1.0

s

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE

= 0V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

600

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

I

B

Base current (DC)

-

A

I

BM

Base current peak value

-

A

P

tot

Total power dissipation

Tmb

25

-

50

W

T

stg

Storage temperature

-65

150

T

j

Junction temperature

-

150

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

UNIT

I

CE

Collector cut-off current

V

BE

= 0V; V

CE

= V

CESMmax

-

1.0

mA

I

CES

V

BE

= 0V; V

CE

= V

CESMmax

-

2.5

mA

T

j

= 125

V

CEOsust

Collector-emitter sustaining voltage

I

B

= 0A; I

C

= 100mA

-

V

L = 25mH

V

CEsat

Collector-emitter saturation voltages

I

C

= 4.0A; I

B

= 0.8A

-

5.0

V

V

BEsat

Base-emitter satuation voltage

I

C

= 4.0A; I

B

= 0.8A

-

1.5

V

h

FE

DC current gain

I

C

= 1.0A; V

CE

= 5V

8

V

F

Diode forward voltage

I

F

= 4.5A

1.6

2.0

V

f

T

Transition frequency at f = 5MHz

I

C

= 0.1A; V

CE

= 10V

3

-

MHz

C

c

Collector capacitance at f = 1MHz

V

CB

= 10V

110

-

pF

t

s

Switching times(16KHz line deflecton circuit)

Ic=4A,IB(end)=0.8A,VCC=105V

-

s

t

f

Turn-off storage time Turn-off fall time

Ic=4A,IB(end)=0.8A,VCC=105V

0.7

1.0

s

ELECTRICAL CHARACTERISTICS

TO-3PFM

Wing Shing Computer Components Co., (H.K.)Ltd.

Tel:[phone] Fax:[phone]

Homepage:

http://www.wingshing.com

E-mail: [e-mail]

2SD1911

Silicon Diffused Power Transistor

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www.datasheetcatalog.com

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