Jul-28-2003

1

SMBT3906/ MMBT3906

1

2

3

VPS05161

PNP Silicon Switching Transistor

•

High DC current gain: 0.1 mA to 100 mA

•

Low collector-emitter saturation voltage

•

Complementary type:

SMBT3904/ MMBT3904 (NPN)

Type

Marking

Pin Configuration

Package

SMBT3906/ MMBT3906

s2A

1 = B

2 = E

3 = C

SOT23

Maximum Ratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

CEO

40

V

Collector-base voltage

V

CBO

40

Emitter-base voltage

V

EBO

5

Collector current

I

C

200

mA

Total power dissipation-
T

S

= 71 °C

P

tot

330

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

-65 ... 150

Thermal Resistance
Parameter

Symbol

Value

Unit

Junction - soldering point

1)

R

thJS

≤

240

K/W

1For calculation of R

thJA

please refer to Application Note Thermal Resistance

Jul-28-2003

2

SMBT3906/ MMBT3906

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage
I

C

= 1 mA, I

B

= 0

V

(BR)CEO

40

-

-

V

Collector-base breakdown voltage
I

C

= 10 µA, I

E

= 0

V

(BR)CBO

40

-

-

Emitter-base breakdown voltage
I

E

= 10 µA, I

C

= 0

V

(BR)EBO

5

-

-

Collector-base cutoff current
V

CB

= 30 V, I

E

= 0

I

CBO

-

-

50

nA

DC current gain

1)

I

C

= 100 µA, V

CE

= 1 V

I

C

= 1 mA, V

CE

= 1 V

I

C

= 10 mA, V

CE

= 1 V

I

C

= 50 mA, V

CE

= 1 V

I

C

= 100 mA, V

CE

= 1 V

h

FE

60
80

100

60
30

-
-
-
-
-

-
-

300

-
-

-

Collector-emitter saturation voltage

1)

I

C

= 10 mA, I

B

= 1 mA

I

C

= 50 mA, I

B

= 5 mA

V

CEsat

-
-

-
-

0.25

0.4

V

Base emitter saturation voltage-

1)

I

C

= 10 mA, I

B

= 1 mA

I

C

= 50 mA, I

B

= 5 mA

V

BEsat

0.65

-

-
-

0.85
0.95

1

Puls test: t

≤

300µs, D = 2%

Jul-28-2003

3

SMBT3906/ MMBT3906

AC Characteristics
Transition frequency
I

C

= 10 mA, V

CE

= 20 V, f = 100 MHz

f

T

250

-

-

MHz

Collector-base capacitance
V

CB

= 5 V, f = 1 MHz

C

cb

-

-

4.5

pF

Emitter-base capacitance
V

EB

= 0.5 V, f = 1 MHz

C

eb

-

-

10

Short-circuit input impedance
I

C

= 1 mA, V

CE

= 10 V, f = 1 kHz

h

11e

2

-

12

k

Ω

Open-circuit reverse voltage transf. ratio
I

C

= 1 mA, V

CE

= 10 V, f = 1 kHz

h

12e

0.1

-

10

10

-4

Short-circuit forward current transf. ratio
I

C

= 1 mA, V

CE

= 10 V, f = 1 kHz

h

21e

100

-

400

-

Open-circuit output admittance
I

C

= 1 mA, V

CE

= 10 V, f = 1 kHz

h

22e

3

-

60

µ

S

Delay time
V

CC

= 3 V, I

C

= 10 mA, I

B1

= 1 mA,

V

BE(off)

= 0.5 V

t

d

-

-

35

ns

Rise time
V

CC

= 3 V, I

C

= 10 mA, I

B1

= 1 mA,

V

BE(off)

= 0.5 V

t

r

-

-

35

Storage time
V

CC

= 3 V, I

C

= 10 mA, I

B1

= I

B2

= 1mA

t

stg

-

-

225

Fall time
V

CC

= 3 V, I

C

= 10 mA, I

B1

= I

B2

= 1mA

t

f

-

-

75

Noise figure
I

C

= 100 µA, V

CE

= 5 V, f = 1 kHz,

∆

f = 200

Hz

, R

S

= 1

k

Ω

F

-

-

4

dB

Jul-28-2003

4

SMBT3906/ MMBT3906

Test circuit

Delay and rise time

EHN00059

275

10

-3.0 V

0

+0.5 V

<4.0

C

-10.6 V

D = 2%

300

<1.0

Ω

Ω

pF

k

ns

ns

Storage and fall time

EHN00060

275

10

-3.0 V

0

+9.1 V

<4.0 pF

C

-10.9 V

D = 2%

1N916

<1.0 ns

t

1

µ

s

500

10 t

1

Ω

Ω

k

< <

Jul-28-2003

5

SMBT3906/ MMBT3906

DC current gain h

FE

=

ƒ

(I

C

)

V

CE

= 1 V, normalized

EHP00774

10

10

mA

h

C

5

FE

10

1

0

10

-1

5

10

10

10

-1

0

1

2

Ι

125 C

25 C

-55 C

5

5

Saturation voltage I

C

=

ƒ

(V

BEsat

; V

CEsat

)

h

FE

= 10

EHP00767

2

0

V

BE sat

C

10

1

10

0

5

Ι

V

mA

0.2

0.4

0.6

0.8

1.0

1.2

CE sat

V

,

5

10

2

V

BE

V

CE

Total power dissipation P

tot

=

ƒ

(T

A

*; T

S

)

* Package mounted on epoxy

0

0

EHP00766

150

50

100

˚C

T

A

S

T

100

200

300

mW

400

P

tot

T T

;

A

S

Permissible Pulse Load
P

totmax

/P

totDC

=

ƒ

(t

p

)

10

EHP00936

-6

0

10

5

D =

5

10

1

5

10

2

3

10

10

-5

10

-4

10

-3

10

-2

10

0

s

0
0.005
0.01
0.02
0.05
0.1
0.2
0.5

tot max

tot

P

DC

P

p

t

t

p

=

D

T

t

p

T

Jul-28-2003

6

SMBT3906/ MMBT3906

Short-circuit forward current
transfer ratio h

21e

=

ƒ

(I

C

)

V

CE

= 10V, f = 1MHz

EHP00770

10

10

mA

h

C

5

21e

10

3

2

10

1

5

10

10

-1

0

1

Ι

5

5

Open-circuit reverse voltage
transfer ratio h

12e

=

ƒ

(I

C

)

V

CE

= 10V, f = 1kHz

EHP00769

10

mA

h

C

12e

10

-5

5

10

10

-1

0

1

Ι

5

-4

10

-3

10

5

Open-circuit output admittance
h

22e

=

ƒ

(I

C

)

V

CE

= 10V, f = 1MHz

EHP00771

10

10

mA

h

C

s

22e

10

2

1

10

0

5

10

10

-1

0

1

Ι

5

5

µ

5

Input impedance
h

11e

=

ƒ

(I

C

)

V

CE

= 10 V, f = 1kHz

10

EHP00768

-1

1

10

mA

-1

10

2

10

5

5

10

0

10

0

C

11e

h

Ι

1

10

5

Ω

k

Jul-28-2003

7

SMBT3906/ MMBT3906

Delay time t

d

=

ƒ

(I

C

)

Rise time t

r

=

ƒ

(I

C

)

EHP00772

10

mA

t

C

r

10

1

10

0

10

10

0

1

2

Ι

5

5

ns

r

t

t

d

,

3

10

5

d

t

10

2

10

3

= 3 V

CC

V

0 V

V

= 2 V

BE

40 V

15 V

h

FE

= 10

Fall time t

f

=

ƒ

(I

C

)

EHP00773

10

mA

t

C

f

10

1

10

0

10

10

0

1

2

Ι

5

5

ns

3

10

5

10

2

10

3

h

FE

= 20

25 C

125 C

CC

V

= 40 V

= 10

FE

h

Package SOT23

Package Outline

Foot Print

Marking Layout

Packing

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

2.6 MAX.

0.25

M

B C

1.9

-0.05

+0.1

0.4

1

A

2

±0.1

3

2.9

DIN 6784

+0.2

acc. to

0.95

C

B

2˚ 30˚

0.20

...

M

A

0.1 MAX.

10

˚

0.08...0.15

1.1 MAX.

1.3

±0.1

MAX.

10

˚MAX.

0.8

1.2

0.9

1.1

0.9

0.8

Manufacturer

Date code (Year/Month)

Type code

2003, July

BCW66

Example

Pin 1

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Impressum

Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).

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For information on the types in question please contact your nearest Infineon
Technologies Office.
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reasonable to assume that the health of the user or other persons may be endangered.