SMBT2222A/ MMBT2222A

1

Feb-18-2002

NPN Silicon Switching Transistor

High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A (PNP)

1

2

3

VPS05161

Type

Marking

Pin Configuration

Package

SMBT2222A/ MMBT2222A

s1P

1=B

2=E

3=C

SOT23

Maximum Ratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

CEO

40

V

Collector-base voltage

V

CBO

75

Emitter-base voltage

V

EBO

6

DC collector current

I

C

600

mA

Total power dissipation

,

T

S

= 77 °C

P

tot

330

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

-65 ... 150

Thermal Resistance
Junction - soldering point

1)

R

thJS

220

K/W

1For calculation of R

thJA

please refer to Application Note Thermal Resistance

SMBT2222A/ MMBT2222A

2

Feb-18-2002

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 10 mA,

I

B

= 0

V

(BR)CEO

40

-

-

V

Collector-base breakdown voltage

I

C

= 10 µA,

I

E

= 0

V

(BR)CBO

75

-

-

Emitter-base breakdown voltage

I

E

= 10 µA,

I

C

= 0

V

(BR)EBO

6

-

-

Collector cutoff current

V

CB

= 60 V,

I

E

= 0

I

CBO

-

-

10

nA

Collector cutoff current

V

CB

= 60 V,

I

E

= 0 ,

T

A

= 150 °C

I

CBO

-

-

10

µA

Emitter cutoff current

V

EB

= 3 V,

I

C

= 0

I

EBO

-

-

10

nA

DC current gain 1)

I

C

= 100 µA,

V

CE

= 10 V

I

C

= 1 mA,

V

CE

= 10 V

I

C

= 10 mA,

V

CE

= 10 V

I

C

= 150 mA,

V

CE

= 1 V

I

C

= 150 mA,

V

CE

= 10 V

I

C

= 500 mA,

V

CE

= 10 V

I

C

= 10 mA, V

CE

= 10 V, T

A

= 55°C

h

FE

35
50
75
50

100

40
35

-
-
-
-
-
-
-

-
-
-
-

300

-
-

-

Collector-emitter saturation voltage1)

I

C

= 150 mA,

I

B

= 15 mA

I

C

= 500 mA,

I

B

= 50 mA

V

CEsat

-
-

-
-

0.3

1

V

Base-emitter saturation voltage 1)

I

C

= 150 mA,

I

B

= 15 mA

I

C

= 500 mA,

I

B

= 50 mA

V

BEsat

0.6

-

-
-

1.2

2

1) Pulse test: t

≤

=

300

µ

s, D = 2%

SMBT2222A/ MMBT2222A

3

Feb-18-2002

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Transition frequency

I

C

= 20 mA,

V

CE

= 20 V,

f

= 100 MHz

f

T

300

-

-

MHz

Collector-base capacitance

V

CB

= 10 V,

f

= 1 MHz

C

cb

-

-

8

pF

Emitter-base capacitance

V

EB

= 0.5 V,

f

= 1 MHz

C

eb

-

-

25

Noise figure

I

C

= 100 µA,

V

CE

= 10 V,

R

S

= 1

k

,

f

= 1 kHz,

f

= 200

Hz

F

-

-

4

dB

Short-circuit input impedance

I

C

= 1 mA,

V

CE

= 10 V,

f

= 1 kHz

I

C

= 10 mA,

V

CE

= 10 V,

f

= 1 kHz

h

11e

2

0.25

-
-

8

1.25

k

Open-circuit reverse voltage transf.ratio

I

C

= 1 mA,

V

CE

= 10 V,

f

= 1 kHz

I

C

= 10 mA,

V

CE

= 10 V,

f

= 1 kHz

h

12e

-
-

-
-

8
4

10

-4

Short-circuit forward current transf.ratio

I

C

= 1 mA,

V

CE

= 10 V,

f

= 1 kHz

I

C

= 10 mA,

V

CE

= 10 V,

f

= 1 kHz

h

21e

50
75

-
-

300
375

-

Open-circuit output admittance

I

C

= 1 mA,

V

CE

= 10 V,

f

= 1 kHz

I

C

= 10 mA,

V

CE

= 10 V,

f

= 1 kHz

h

22e

5

25

-
-

35

200

S

Delay time

V

CC

= 30 V,

I

C

= 150 mA,

I

B1

= 15 mA,

V

BE(off)

= 0.5 V

t

d

-

-

10

ns

Rise time

V

CC

= 30 V,

I

C

= 150 mA,

I

B1

= 15 mA,

V

BE(off)

= 0.5 V

t

r

-

-

25

Storage time

V

CC

= 30 V,

I

C

= 150 mA, I

B1

=I

B2

= 15mA

t

stg

-

-

225

ns

Fall time

V

CC

= 30 V,

I

C

= 150 mA, I

B1

=

IB2 = 15mA

t

f

-

-

60

ns

SMBT2222A/ MMBT2222A

4

Feb-18-2002

Test circuits

Delay and rise time

EHN00055

200

Osc.

619

30

9.9

0

0.5

Ω

Ω

V

V

V

Storage and fall time

EHN00056

200

Osc.

1

30

16.2

0

-13.8

-3.0

µ

500

~

s

s

~100

µ

< 5 ns

Ω

Ω

V

V

V

V

k

Oscillograph

: R > 100

Ω

, C < 12pF, t

r

< 5ns

SMBT2222A/ MMBT2222A

5

Feb-18-2002

Collector-base capacitance

C

CB

= f (V

CB

)

f

= 1MHz

EHP00739

SMBT 2222/A

10
pF

10

10

V

C

CB

10

5

10

cb

5

5

-1

0

1

2

10

2

1

10

0

5

V

Total power dissipation

P

tot

= f(T

S

)

0

15

30

45

60

75

90 105 120

°C

150

T

S

0

30

60

90

120

150

180

210

240

270

300

mW

360

P

tot

Permissible pulse load
P

totmax

/ P

totDC

= f (t

p

)

10

EHP00740

SMBT 2222/A

-6

0

10

5

D =

5

10

1

5

10

2

3

10

10

-5

10

-4

10

-3

10

-2

10

0

s

0
0.005
0.01
0.02
0.05
0.1
0.2
0.5

t

p

=

D

T

t

p

T

tot max

tot

P

DC

P

p

t

Transition frequency

f

T

= f (I

C

)

V

CE

= 20V

EHP00741

SMBT 2222/A

10

10

10

mA

f

C

10

MHz

10

T

5

5

5

Ι

0

1

2

3

10

3

2

10

1

5

2

2

SMBT2222A/ MMBT2222A

6

Feb-18-2002

Saturation voltage

I

C

= f (V

BEsat

, V

CEsat

)

h

FE

= 10

EHP00742

SMBT 2222/A

10

0

V

BE sat

mA

10

3

1

10

-1

5

10

0

5

V

0.2

0.4

0.6

0.8

1.0

1.2

CE sat

V

,

5

10

2

V

BE

V

CE

Ι

C

DC current gain

h

FE

= f (I

C

)

V

CE

= 10V

EHP00743

SMBT 2222/A

10

10

mA

h

C

10

5

FE

10

3

2

10

1

5

10

10

10

-1

0

1

2

3

Ι

-50 ˚C

25 ˚C

150 ˚C

Delay time

t

d

= f (I

C

)

Rise time

t

r

= f (I

C

)

EHP00744

SMBT 2222/A

10

ns

10

10

mA

t

C

10

5

10

d

5

5

5

Ι

0

1

2

3

10

3

2

10

1

5

r

t

,

h

FE

t

d

t

d

t

r

t

r

V

CC

= 30 V

= 10

V

BE

= 5 V

= 2 V

= 0 V

V

BE

V

BE

Storage time

t

stg

= f (I

C

)

Fall time

t

f

= f (I

C

)

EHP00745

SMBT 2222/A

10

10

mA

C

5

10

3

2

10

1

5

10

10

1

2

3

Ι

5

5

ns

FE

h

h

FE

s

t

f

t

= 10

= 20

s

t t

,

f

h

FE

= 10

Package SOT23

P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t

P a c k i n g

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

2.6 MAX.

0.25

M

B C

1.9

-0.05

+0.1

0.4

1

A

2

±0.1

3

2.9

DIN 6784

+0.2

acc. to

0.95

C

B

2˚ 30˚

0.20

...

M

A

0.1 MAX.

10

˚

0.08...0.15

1.1 MAX.

1.3

±0.1

MAX.

10

˚

MAX.

0.8

1.2

0.9

1.1

0.9

0.8

Manufacturer

Date code (Year/Month)

Type code

2003, July

BCW66

Example

Pin 1

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Impressum

Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.