FEATURES

D TrenchFETr Power MOSFETS

D 175_C Junction Temperature

D New Low Thermal Resistance Package

APPLICATIONS

D Industrial

SUP40N25-60

Vishay Siliconix

New Product

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

www.vishay.com

1

N-Channel 250-V (D-S) 175

_

C MOSFET

PRODUCT SUMMARY

V

(BR)DSS

(V)

r

DS(on)

(

W

)

I

D

(A)

Q

g

(Typ)

250

0.060 @ V

GS

= 10 V

40

95

250

0.064 @ V

GS

= 6 V

38.7

95

TO-220AB

Top View

G D S

Ordering Information: SUP40N25-60—E3

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (T

C

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V

DS

250

Gate-Source Voltage

V

GS

"30

V

Continuous Drain Current

(T

J

= 175_C)

T

C

= 25_C

I

D

40

Continuous Drain Current

(T

J

= 175_C)

T

C

= 125_C

I

D

23

A

Pulsed Drain Current

I

DM

70

A

Avalanche Current

I

AR

35

Repetitive Avalanche Energy

a

L = 0.1 mH

E

AR

61

mJ

Maximum Power Dissipation

a

T

C

= 25_C

P

D

300

b

W

Maximum Power Dissipation

a

T

A

= 25_C

c

P

D

3.75

W

Operating Junction and Storage Temperature Range

T

J

, T

stg

−55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)

c

R

thJA

40

_C/W

Junction-to-Case (Drain)

R

thJC

0.5

_C/W

Notes

a.

Duty cycle v 1%.

b.

See SOA curve for voltage derating.

c.

When mounted on 1” square PCB (FR-4 material).

SUP40N25-60

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

SPECIFICATIONS (T

J

=25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

DS

= 0 V, I

D

= 250 mA

250

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 mA

2

4

V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= "30 V

"250

nA

V

DS

= 250 V, V

GS

= 0 V

1

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 250 V, V

GS

= 0 V, T

J

= 125_C

50

mA

g

DSS

V

DS

= 250 V, V

GS

= 0 V, T

J

= 175_C

250

m

On-State Drain Current

a

I

D(on)

V

DS

w 5 V, V

GS

= 10 V

70

A

V

GS

= 10 V, I

D

= 20 A

0.049

0.060

Drain Source On State Resistance

a

r

DS( )

V

GS

= 10 V, I

D

= 20 A, T

J

= 125_C

0.121

W

Drain-Source On-State Resistance

a

r

DS(on)

V

GS

= 10 V, I

D

= 20 A, T

J

= 175_C

0.163

W

V

GS

= 6 V, I

D

= 15 A,

0.051

0.064

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 20 A

70

S

Dynamic

b

Input Capacitance

C

iss

5000

Output Capacitance

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz

300

pF

Reverse Transfer Capacitance

C

rss

170

Total Gate Charge

c

Q

g

95

140

Gate-Source Charge

c

Q

gs

V

DS

= 125 V,

V

GS

= 10 V, I

D

= 45 A

28

nC

Gate-Drain Charge

c

Q

gd

DS

,

GS

,

D

34

Gate Resistance

R

g

f = 1 MHz

1.6

W

Turn-On Delay Time

c

t

d(on)

22

35

Rise Time

c

t

r

V

DD

= 100 V, R

L

= 2.78 W

220

330

ns

Turn-Off Delay Time

c

t

d(off)

V

DD

= 100 V, R

L

= 2.78 W

I

D

^ 45 A, V

GEN

= 10 V, R

g

= 2.5 W

40

60

ns

Fall Time

c

t

f

145

220

Source-Drain Diode Ratings and Characteristics (T

C

= 25

_

C)

b

Continuous Current

I

S

45

A

Pulsed Current

I

SM

70

A

Forward Voltage

a

V

SD

I

F

= 45 A, V

GS

= 0 V

1.0

1.5

V

Reverse Recovery Time

t

rr

150

225

ns

Peak Reverse Recovery Current

I

RM(REC)

I

F

= 45 A, di/dt = 100 A/ms

12

18

A

Reverse Recovery Charge

Q

rr

0.9

2

mC

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

c.

Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

SUP40N25-60

Vishay Siliconix

New Product

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

1000

2000

3000

4000

5000

6000

7000

0

40

80

120

160

200

0

4

8

12

16

20

0

30

60

90

120

150

180

0

30

60

90

120

150

0

10

20

30

40

50

60

0.00

0.02

0.04

0.06

0.08

0.10

0

20

40

60

80

100

0

20

40

60

80

100

0

1

2

3

4

5

6

0

20

40

60

80

100

0

2

4

6

8

10

Output Characteristics

Transfer Characteristics

Capacitance

Gate Charge

Transconductance

On-Resistance vs. Drain Current

V

DS

− Drain-to-Source Voltage (V)

V

GS

− Gate-to-Source Voltage (V)

− Drain Current (A)
I

D

− Gate-to-Source V

oltage (V)

Q

g

− Total Gate Charge (nC)

I

D

− Drain Current (A)

V

DS

− Drain-to-Source Voltage (V)

C

− Capacitance (pF)

V

GS

− T

ransconductance

(S)

g

fs

25_C

−55_C

T

C

= 125_C

V

DS

= 125 V

I

D

= 45 A

V

GS

= 10 thru 7 V

V

GS

= 6 V

C

iss

C

oss

T

C

= −55_C

25_C

125_C

4 V

− On-Resistance (

r

DS(on)

W

)

− Drain Current (A)
I

D

I

D

− Drain Current (A)

6 V

C

rss

5 V

V

GS

= 10 V

SUP40N25-60

Vishay Siliconix

New Product

www.vishay.com

4

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Drain Source Breakdown vs.

Junction Temperature

Avalanche Current vs. Time

0.4

0.8

1.2

1.6

2.0

2.4

2.8

−50 −25

0

25

50

75

100 125 150 175

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

T

J

− Junction Temperature (_C)

V

SD

− Source-to-Drain Voltage (V)

− Source Current (A)
I

S

100

10

1

0.3

0.6

0.9

1.2

V

GS

= 10 V

I

D

= 20 A

T

J

= 25_C

T

J

= 150_C

0

230

240

250

260

270

280

290

300

−50 −25

0

25

50

75

100 125 150 175

T

J

− Junction Temperature (_C)

t

in

(Sec)

100

10

0.00001

0.001

0.1

1

0.1

(a)

I

Dav

0.01

I

AV

(A) @ T

A

= 150_C

(V)

V

(BR)DSS

I

D

= 1.0 mA

1

0.0001

I

AV

(A) @ T

A

= 25_C

r

DS

(on)

−

On-Resiistance

(Normalized)

SUP40N25-60

Vishay Siliconix

New Product

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

www.vishay.com

5

THERMAL RATINGS

0

10

20

30

40

50

0

25

50

75

100

125

150

175

Safe Operating Area, Case Temperature

100

10

0.1

1

10

1000

*Limited

by r

DS(on)

0.001

T

C

= 25_C

Single Pulse

Maximum Avalanche and Drain Current

vs. Case Temperature

T

C

− Ambient Temperature (_C)

− Drain Current (A)
I

D

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

10

−4

10

−3

10

−2

10

−1

1

Normalized Ef

fective

Transient

Thermal Impedance

0.2

0.1

Duty Cycle = 0.5

− Drain Current (A)
I

D

1 ms
10 ms, 100 ms, dc

10 ms

100 ms

Single Pulse

0.05

0.02

1

100

0.1

0.01

V

DS

− Drain-to-Source Voltage (V)

*V

GS

u minimum V

GS

at which r

DS(on)

is

specified

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73132

.

Legal Disclaimer Notice

Vishay

Document Number: 91000

www.vishay.com

Revision: 08-Apr-05

1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.