TIP29, TIP29A, TIP29B, TIP29C

NPN SILICON POWER TRANSISTORS

1

JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.

●

Designed for Complementary Use with the
TIP30 Series

●

30 W at 25°C Case Temperature

●

1 A Continuous Collector Current

●

3 A Peak Collector Current

●

Customer-Specified Selections Available

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for t

p

≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= 0.4 A, R

BE

= 100

Ω,

V

BE(off)

= 0, R

S

= 0.1

Ω, V

CC

= 20 V.

RATING

SYMBOL

VALUE

UNIT

Collector-base voltage (I

E

= 0)

TIP29

TIP29A

TIP29B

TIP29C

V

CBO

80

100

120

140

V

Collector-emitter voltage (I

B

= 0)

TIP29

TIP29A

TIP29B

TIP29C

V

CEO

40

60

80

100

V

Emitter-base voltage

V

EBO

5

V

Continuous collector current

I

C

1

A

Peak collector current (see Note 1)

I

CM

3

A

Continuous base current

I

B

0.4

A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

P

tot

30

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

P

tot

2

W

Unclamped inductive load energy (see Note 4)

½LI

C

2

32

mJ

Operating junction temperature range

T

j

-65 to +150

°C

Storage temperature range

T

stg

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

T

L

250

°C

B

C

E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1

2

3

TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS

2

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle

≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V

(BR)CEO

Collector-emitter

breakdown voltage

I

C

= 30 mA

(see Note 5)

I

B

= 0

TIP29

TIP29A

TIP29B

TIP29C

40

60

80

100

V

I

CES

Collector-emitter

cut-off current

V

CE

= 80 V

V

CE

= 100 V

V

CE

= 120 V

V

CE

= 140 V

V

BE

= 0

V

BE

= 0

V

BE

= 0

V

BE

= 0

TIP29

TIP29A

TIP29B

TIP29C

0.2

0.2

0.2

0.2

mA

I

CEO

Collector cut-off

current

V

CE

= 30 V

V

CE

= 60 V

I

B

= 0

I

B

= 0

TIP29/29A

TIP29B/29C

0.3

0.3

mA

I

EBO

Emitter cut-off

current

V

EB

= 5 V

I

C

= 0

1

mA

h

FE

Forward current

transfer ratio

V

CE

= 4 V

V

CE

= 4 V

I

C

= 0.2 A

I

C

= 1 A

(see Notes 5 and 6)

40

15

75

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= 125 mA

I

C

= 1 A

(see Notes 5 and 6)

0.7

V

V

BE

Base-emitter

voltage

V

CE

= 4 V

I

C

= 1 A

(see Notes 5 and 6)

1.3

V

h

fe

Small signal forward

current transfer ratio

V

CE

= 10 V

I

C

= 0.2 A

f = 1 kHz

20

|

h

fe

|

Small signal forward

current transfer ratio

V

CE

= 10 V

I

C

= 0.2 A

f = 1 MHz

3

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

R

θJC

Junction to case thermal resistance

4.17

°C/W

R

θJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

t

on

Turn-on time

I

C

= 1 A

V

BE(off)

= -4.3 V

I

B(on)

= 0.1 A

R

L

= 30

Ω

I

B(off)

= -0.1 A

t

p

= 20 µs, dc

≤ 2%

0.5

µs

t

off

Turn-off time

2

µs

TIP29, TIP29A, TIP29B, TIP29C

NPN SILICON POWER TRANSISTORS

3

JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1.

Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·001

0·01

0·1

1·0

h

FE

-

D

C

C

u

rre

n

t

Ga

in

1

10

100

1000

TCS631AD

V

CE

= 4 V

T

C

= 25°C

t

p

= 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

I

B

- Base Current - mA

0·1

1·0

10

100

1000

V

CE

(s

a

t)

- Co

ll

e

c

to

r-Em

itte

r Sa

tu

ra

ti

o

n

V

o

lt

a

g

e

- V

0·01

0·1

1·0

10

TCS631AE

I

C

= 100 mA

I

C

= 300 mA

I

C

= 1 A

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·01

0·1

1·0

V

BE

- Ba

s

e

-E

m

itte

r Vo

lt

a

g

e

- V

0·5

0·6

0·7

0·8

0·9

1·0

TCS631AF

V

CE

= 4 V

T

C

= 25°C

TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS

4

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

MAXIMUM SAFE OPERATING REGIONS

Figure 4.

THERMAL INFORMATION

Figure 5.

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

V

CE

- Collector-Emitter Voltage - V

1·0

10

100

1000

I

C

- Co

ll

e

c

to

r Cu

rre

n

t - A

0·01

0·1

1·0

10

100

SAS631AC

TIP29
TIP29A
TIP29B
TIP29C

t

p

= 300 µs, d = 0.1 = 10%

t

p

= 1 ms, d = 0.1 = 10%

t

p

= 10 ms, d = 0.1 = 10%

DC Operation

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

T

C

- Case Temperature - °C

0

25

50

75

100

125

150

P

to

t

-

Ma

xi

mu

m

P

o

w

e

r D

is

s

ip

at

io

n

-

W

0

10

20

30

40

TIS631AB