1

Podstawy techniki

mikroprocesorowej

ETEW006

Pamięci

ROM i RAM

Andrzej Stępień

Katedra Metrologii Elektronicznej i Fotonicznej

Pamięć ROM (R

ead

-O

nly

M

emory

)

tylko odczyt

, brak wpływu napi

ę

cia zasilania Vcc na zawarto

ść

pami

ę

ci

ROM

- programowane przez producenta pami

ę

ci w czasie produkcji (MROM -

Mask programmable ROM)

PROM

(

Programmable ROM

) - pami

ęć

1-krotnego zapisu (programowania);

programowane przez przepalenie poł

ą

cze

ń

struktury wewn

ę

trznej

EPROM

(

Electrically Programmable ROM

) - pami

ęć

, programowalna

elektrycznie, kasowana innymi metodami np. przez na

ś

wietlanie

ś

wiatłem

ultrafioletowym o wysokiej energii

OTP EPROM

(

One -Time Programmable EPROM

) - pami

ęć

EPROM

1-krotnie programowalna (brak okienka)

EEPROM

(

Erasable Electrically Programmable ROM

) - pami

ęć

wielokrotnego zapisu, kasowalna i programowalna elektrycznie

Flash EEPROM

– zapis / kasowanie wielu (bloków) komórek pami

ę

ci

podczas jednej operacji programowania

FRAM

(

Ferroelectric RAM

) – ferroelektryczna pami

ęć

RAM

Pamięć ulotna RAM

Pami

ęć

ulotna

RAM

(Volatile

R

andom

A

ccess

M

emory):

pami

ęć

o dost

ę

pie swobodnym,

utrata

zawarto

ś

ci w momencie

zaniku napi

ę

cia zasilania Vcc

SRAM

(Static RAM):

•

przerzutnik bistabilny jako element pami

ę

ciowy

•

brak cykli od

ś

wie

ż

ania

•

wi

ę

ksza (~4 razy) powierzchnia od pami

ę

ci DRAM o tej samej

pojemno

ś

ci

•

szybsza w stosunku do pami

ę

ci dynamicznej

DRAM

(Dynamic RAM)

•

kondensator jako element pami

ę

ciowy

•

od

ś

wie

ż

anie (refresh) ładunku (upływno

ść

) kondensatora

•

małe rozmiary

Types of RAM Memory

SRAM

(

Static Random Access Memory

) uses multiple transistors, typically

4 to 6, for each memory cell but doesn't have a capacitor in each cell

DRAM

(

Dynamic Random Access Memory

) has memory cells with

a paired transistor and capacitor requiring constant refreshing

FPM DRAM

(

Fast Page Mode Dynamic Random Access Memory

)

EDO DRAM

(

Extended Data-Out Dynamic Random Access Memory

)

SDRAM

(

Synchronous Dynamic Random Access Memory

)

DDR SDRAM

(

Double Data Rate Synchronous Dynamic RAM

)

RDRAM

(

Rambus Dynamic Random Access Memory

)

RIMM

(

Rambus in-line memory module

)

Credit Card Memory

,

CMOS RAM

VRAM

(

VideoRAM

,

known as

MPDRAM

-

Multiport Dynamic Random Access Memory

)

SGRAM

(

Synchronous Graphics RAM

)

Pamięć nieulotna NVRAM

Pami

ęć

nieulotna

NVRAM

(

N

on-

V

olatile

R

andom

A

ccess

M

emory)

pami

ęć

o dost

ę

pie swobodnym,

zachowanie

zawarto

ś

ci w momencie

zaniku napi

ę

cia zasilania Vcc

•

pami

ę

ci ferrytowe u

ż

ywane w latach 50. i 60. XX wieku

•

pami

ę

ci z podtrzymaniem bateryjnym

•

NRAM - technologia nanorurek w

ę

glowych

•

MRAM – magnetyczny efekt tunelowy magnetycznego

•

OUM - zmiany stanu stopów pierwiastków rudotwórczych
(analogia do płyt CD, DVD – zapis/kasowanie za pomoc

ą

lasera,

zmiana stanu z krystalicznego na amorficzny)

•

FRAM - wła

ś

ciwo

ś

ci ferromagnetyczne

Fusion Memory

As

consumers continue their insatiable demand for higher-performance,

ever-smaller mobile devices

, Samsung’s fusion memory products are

increasingly chosen by handheld designers.

These

fusion semiconductors integrate different memory technologies

and can also include logic, software and other elements on a single
chip

. Samsung’s fusion products simplify device architecture, reduce power

consumption, increase performance and cut costs while enabling mobile
products to be smaller and deliver greater functionality than ever.

Samsung as the world memory

leader and a strong player in mobile logic

chips, Samsung has exploited its considerable expertise in technologies and
processes to create its fusion memory offerings.

These chips are optimal for

today’s fast-selling consumer products, from mobile phones, portable
media players and digital cameras to personal navigation devices and
multi-function handhelds

.

Samsung Fusion Memory. The Next-Generation Technology for High-Performance

Mobile Applications. Samsung Semiconductor, December 2007

2

OneNAND Flash

(NAND core + NOR interface logic + SRAM buffer)

Samsung Fusion Memory. The Next-Generation Technology for High-Performance

Mobile Applications. Samsung Semiconductor, December 2007

•

The highest-performance flash on the market

•

Included in dozens of different mobile products

•

Has program/erase performance of NAND with NOR’s read performance

•

Can improve booting speed of mobile phones by as much as 20 percent

•

uses up to 60 percent less energy than competing NOR memory

Memory Parameter

(www.st.com

→

→

→

→

Memories)

Memory Size

– [Storage Capacity] The amount of data that can be contained in a

storage device measured in binary characters, bytes, words, or other units of
data. IEEE Std. 610.10-1994.

Supply Voltage

(V

CC

) - the value as specified by level (minTypMax) of the direct

supply voltage, applied to an IC. IEC61360-AAE690 (V

CC

).

Memory Organization

- Shown as a text representation of the Memory

Organization (i.e. 512 x 8).

Access Time

(t

ACC

) - time of address to output delay.

Chip Enable

To Output Delay (t

CE

) - time of chip enable to output delay.

Output Enable

To Output Delay(t

OE

) - time of output enable to output delay.

Programming Voltage

(V

PP

) /

Current

(I

PP

) - Programming voltage or current by

the specified test condition

Standby Supply Voltage Current

CMOS(I

CC2

)-Operating supply current by the

specified test condition.

Operating Temperature

- The value as specified by level (minTypMax) of the

ambient temperature (in Cel) in which this item was designed to operate.

Memory

Signal Names

V

CC

– Supply Voltage

V

SS

– Ground

V

PP

– Program Supply

A

0

.. A

XX

(Addr) – Address Inputs

D

0

.. D

XX

or

Q

0

.. Q

XX

(Data) – Data Inputs / Outputs

RD

– Data Read

WR

– Data Write

CS

or

E

– Chip Select / Enable

OE

or

G

– Output Enable

P

– Program

NC

– Not Connected Internally

DU

– Don’t Use

Microprocessor

&

&

&

&

Memory

Address

Decoder

ROM

Memory

RAM

Memory

Addr

Data

OE

CS

Addr

Data

OE

CS

WE

Address Bus

Microprocessor
Microcontroller

Addr

Data

Data Bus

RD

WR

Single CS#

Memory

Select

Address

Decoder

Memory

Flash

Memory

Addr

Data

OE

CS

Addr (A

15..0

)

Data (IO

7..0

)

OE

CS

WE

Address Bus

Microprocessor
Microcontroller

Addr

Data

Data Bus

RD

WR

Single CS#

MODE

CE OE WE Ai

I/O

Standby/Write Inhibit H

X

X

X

High Z

Output disable

X

H

X

High Z

Read

L

L

H

Ai

D

OUT

Program

L

H

L

Ai

D

IN

I

SB1

V

CC

Standby Current < 50

µ

A

I

CC

V

CC

Active Current

< 15 mA

AT29LV512 . 512K (64Kx8)
3-volt Only Flash Memory.
Atmel, 0177O–FLASH–9/08

Memory

Read Waveforms

Address

Decoder

Memory

Flash

Memory

Addr

Data

OE

CS

Addr (A

15..0

)

Data (IO

7..0

)

OE

CS

WE

Address Bus

Microprocessor
Microcontroller

Addr

Data

Data Bus

RD

WR

Single CS#

AT29LV512 . 512K (64Kx8)
3-volt Only Flash Memory.
Atmel, 0177O–FLASH–9/08

AC Read Characteristics AT29LV512-

12

Symbol Parameter

Units

t

ACC

Address to Output Delay

.. 120 ns

t

CE

CE to Output Delay

.. 120 ns

t

OE

OE to Output Delay

0 .. 50 ns

t

DF

CE or OE to Output Float

0 .. 30 ns

t

OH

Output Hold from OE, CE

0 .. ns

or Address, whichever occurred first

Access Time

t

ACC

Address Valid

Output

Valid

3

Memory Address

Decoder

(1/2)

ROM

Memory

4Kx8

RAM

Memory

4Kx8

Addr

11..0

Data

7..0

OE

CS

Addr

11..0

Data

7..0

OE

CS

WE

Address Bus

Microprocessor
Microcontroller

Addr

Data

Data Bus

RD

WR

A

15

16

8

0000h

ROM (1)

ROM (2) 1000h

ROM (3) 2000h

6000h

ROM (8) 7000h

RAM (1) 8000h

RAM (2) 9000h

ROM (7)

.........

E000h

RAM (8) F000h
RAM (7)

.........

A

15

= 0

A

15

= 1

FFFFh

EFFFh

DFFFh

9FFFh

8FFFh

7FFFh

6FFFh

5FFFh

2FFFh

1FFFh

0FFFh

FFFFh=

1

111

1111 1111 1111b

F000h =

1

111

0000 0000 0000b

EFFFh=

1

110

1111 1111 1111b

E000h =

1

110

0000 0000 0000b

9FFFh=

1

001

1111 1111 1111b

9000h =

1

001

0000 0000 0000b

8FFFh=

1

000

1111 1111 1111b

8000h =

1

000

0000 0000 0000b

7FFFh=

0

111

1111 1111 1111b

7000h =

0

111

0000 0000 0000b

6FFFh=

0

110

1111 1111 1111b

6000h =

0

110

0000 0000 0000b

2FFFh=

0

010

1111 1111 1111b

2000h =

0

010

0000 0000 0000b

1FFFh=

0

001

1111 1111 1111b

1000h =

0

001

0000 0000 0000b

0FFFh=

0

000

1111 1111 1111b

0000h =

0

000

0000 0000 0000b

0000h

ROM (1)

ROM (2) 1000h

ROM (3) 2000h

6000h

ROM (8) 7000h

RAM (1) 8000h

RAM (2) 9000h

ROM (7)

.........

E000h

RAM (8) F000h
RAM (7)

.........

A

15

= 0

A

15

= 1

FFFFh

EFFFh

DFFFh

9FFFh

8FFFh

7FFFh

6FFFh

5FFFh

2FFFh

1FFFh

0FFFh

Memory Address

Decoder

(2/2)

A

15

A

15

A

11 .. 0

A

11 .. 0

Single CS SRAM

&

dual CS SRAM

if you take

dual CS

products, you can reduce

board area because

you do not need

additional component

dual CS

products represent frexibility of system

design, which

adopt battery backup mode

TNAL9803. BENEFIT OF DUAL CS. TECHNICAL NOTE

SAMSUNG Electronics CO., LTD. 1998

CS

WE

OE

Addr

Data

SRAM

CS1

WE

OE

CS2

Addr

Data

SRAM

if system has more than one SRAM or controller can

not drive CS to high at power down mode

,

you

need additional component

on PCB for Data

Retention mode

Dual CS

SRAM

If system has more than one SRAM or controller can not drive CS
to high at power down mode, you need additional component on
PCB for Data Retention mode

if you take dual CS products, you can reduce board area because
you do not need additional component

Dual CS products represent frexibility of system design, which
adopt battery backup mode

EPROM / OTP EPROM

EPROM

(

E

lectrically

P

rogrammable

R

ead

O

nly

M

emory) is a nonvolatile

memory which offers the ability to both program and erase the contents
of the memory multiple times.

An EPROM must be

programmed

using a

12.5 volt

(or higher) PROM

programmer, and then transferred into the system in which it is intended
to function.

EPROMs can be

erased

by shining

ultraviolet light

into the window in

the top of the IC package. The process of writing data into an EPROM
and then erasing it may be repeated almost indefinitely. EPROMs are
usually used for product development, and later replaced with less
expensive one–time programmable EPROMs.

OTP

EPROM:

O

ne–

T

ime

P

rogrammable EPROM. An EPROM which

can only be written with code/data once instead of multiple times.
Generally, OTP EPROMs are less expensive then erasable EPROMs.

EPROM

Parameters

Mode

E

G

P

V

PP

Q Output

Read

V

IL

V

IL

V

IH

V

CC

Data Out

Output Disable

V

IL

V

IH

V

IH

V

CC

Hi-Z

Program

V

IL

X

V

IL

Pulse

V

PP

Data Input

Verify

V

IL

V

IL

V

IH

V

PP

Data Output

Standby

V

IH

X

X

V

CC

Hi-Z

M27C64A. 64 Kbit (8Kbit x 8) UV EPROM and OTP EPROM.

STMicroelectronics, October 2002

C

IN

Input Capacitance

V

IN

= 0V

6 pF

MAX

C

OUT

Output Capacitance

V

OUT

= 0V

12 pF

MAX

I

CC

Supply Current

E = V

IL

G = V

IL

30 mA

MAX

I

CC1

Supply Current (Standby) TTL

E = V

IH

G =

X

1 mA

MAX

I

CC2

Supply Current (Standby) CMOS

E > V

CC

– 0.2V

100

µ

A

MAX

4

EPROM

Timing

Q0-Q7

G

E

A0-Q12

250

250

300

300

t

AVQV

t

AVQV

t

ELQV

t

ELQV

EPROM

Erasure Operation

When delivered (and after each erasure for UV EPROM), all bits of the
M27C64A are in the "1” state.

Data is introduced by selectively programming "0"s into the desired bit
locations. Although only "0"s will be programmed, both "1"s and "0"s can
be present in the data word.

The only way to change a "0" to a "1" is by die exposition to ultraviolet
light (UV EPROM). The M27C64A is in the programming mode when
VPP input is at 12.5V, E is at V

IL

and P is pulsed to V

IL

.

The data to be programmed is applied to 8 bits in parallel to the data
output pins. The levels required for the address and data inputs are TTL.
V

CC

is specified to be 6V ± 0.25V.

erasure begins when the cells are exposed to

light with

wavelengths shorter

than approximately

4000 Å

; it should be noted that sunlight and some type of

fluorescent lamps

have wavelengths in the

3000-4000 Å

range

research shows that constant exposure to

room

level

fluorescent

lighting

could

erase

a typical M27C64A in about

3 years

, while it would take

approximately

1 week

to cause erasure when exposed to direct

sunlight

recommended

erasure procedure for the M27C64A is exposure to short

wave ultraviolet light which has a

wavelength

of

2537 Å

integrated dose (i.e. UV

intensity

x exposure time) for erasure should be a

minimum of

15 W-sec/cm

2

; erasure time with this dosage is approximately

15 to 20 minutes

using an ultraviolet lamp with

12000

µ

W/cm

2

power rating -

M27C64A should be placed within

2.5 cm

(1 inch) of the lamp tubes during

the erasure

EEPROM - Flash Memory

EEPROM

:

•

erase the entire device all at once

•

program or write

single bytes

at a time

Flash

is a high-speed EEPROM:

•

program and erase

BLOCKS

of data at a time

EEPROM

AT25128/AT25256. SPI Serial Automotive EEPROMs 128K (16,384 x 8) / 256K (32,768 x 8)

Atmel Corporation 2002, Rev. 3262A–SEEPR–02/02

Serial Peripheral Interface (SPI) Compatible

Medium-voltage and Standard-voltage Operation

– 5.0 (VCC = 4.5V to 5.5V)
– 2.7 (VCC = 2.7V to 5.5V)

3 MHz Clock Rate

64-byte Page Mode and Byte Write Operation

Block Write Protection – Protect 1/4, 1/2, or Entire Array

Write Protect (WP) Pin and Write Disable Instructions for both Hardware and
Software Data Protection

Self-timed Write Cycle (5 ms Typical)

High-reliability

– Endurance: 100,000 Write Cycles
– Data Retention: >200 Years

EEPROM

(Electronically Erasable Programmable Read Only Memory)

EEPROM

has a grid

of columns and rows
with a cell that has
two transistors at
each intersection

transistors are sepa-
rated from each other
by a thin

oxide layer

transistors is known
as a

Floating Gate

and

Control Gate

as long as this link is in place, the cell has a value of 1 – to change the value
to a 0 requires a curious process called

Fowler-Nordheim tunneling

tunneling

(and

erasing

) is used to alter the placement of electrons in the

floating gate (an electrical charge, usually 10 to 13 volts, is applied to the
floating gate) – the charge comes from the column, or

bitline

, enters the

floating gate and drains to a ground

Thin Oxide

Layer

Thin Oxide

Layer

Word Line

B

it

L

in

e

http://electronics.howstuffworks.com/flash-memory.htm

Control

Gate

Floating

Gate

Source

Drain

Current flow

Negatively charged

electrons

http://electronics.howstuffworks.com/flash-memory.htm

EEPROM

Tunneling

charge

causes the

floating-gate transistor to
act like an

electron gun

excited

electrons

are

pushed

through and

trapped on other side of
the thin oxide layer, giving
it a

negative charge

these

negatively

charged electrons

act as

a

barrier

between the control gate called a cell sensor monitors the level of

the charge passing through the floating gate

if the

flow

through the gate

is above the 50 percent

threshold, it has a value

of

1

– when the

charge

passing through

drops below the 50-percent

threshold, the value changes to

0

blank

EEPROM has all of the gates fully open, giving each cell a value of

1

Thin Oxide

Layer

Thin Oxide

Layer

Word Line

B

it

L

in

e

Control

Gate

Floating

Gate

Source

Drain

Current flow

Negatively charged

electrons









HOW STUFF WORKS

5

NAND / NOR Comparison

Jim Cooke: ESC-225 NAND 101. An Introduction to NAND Flash and How to Design

it into Your Next Product. Micron Technology, Inc.

April 4 2006

• Advantages:

– Fast writes
– Fast erases

• Disadvantages:

– Slow random access
– Byte writes difficult

• Applications:

– File (disk) applications
– Voice, data, video recorder
– Any large sequential data

• Advantages:

– Random access

– Byte writes possible

• Disadvantages:

– Slow writes

– Slow erase

• Applications

– Replacement of EPROM

– Execute directly from

nonvolatile memory

NOR

NAND

Figure 4: NAND/NOR comparison

NOR

vs

NAND

Programming
unit:

µµµµ

s/Byte

Erasing
unit:

µµµµ

s/Byte

Read
unit:

µµµµ

s/Byte

NAND NOR

NAND NOR

NAND

x8

NOR

NAND

x16

NAND

NOR

Capacity

1 Gbit x chip

128 Mbit per chip

Power Supply

2,7 – 3,6 V

2,3 – 3,6 V

Access Time

50 ns (serial access cycle) 70 ns (30pF; 2,3V)
25

µµµµ

s (random access)

65 ns (30pF, 2,7V)

Programm Speed (typ)

200

µµµµ

s / 512 Byte

8

µµµµ

s / Byte

Erase Speed (typ)

2 ms / Block (16 KB)

4,1 ms / 512 Byte

Prog + Erase (typ)

33,6 ms / 64 KB

700 ms / Block

6,0

0,4

0,12

15,2

69

44

45

SRAM

(

S

tatic

R

andom

A

ccess

M

emory)

is essentially a

stable DC flip–flop

requiring no clock timing or

refreshing

contents

of an

SRAM

memory are retained

as long as power is

supplied

SRAMs

support extremely

fast access times

SRAMs

also have relatively few strict timing requirements and a

parallel address structure,

making

them particularly suited

for

cache

and other low–density, frequent–access applications

NV SRAM

(

N

on

V

olatile

S

tatic

R

andom

A

ccess

M

emory)

NV SRAM

is a single package which contains a

low–power SRAM

, a

nonvolatile memory controller, and a

lithium type battery

when the

power supply

to this single modular package

falls

below the

minimum requirement to maintain the contents of the SRAM, the

memory

controller in the module switches the power supply from the external
source to the internal lithium battery

and write

protects

the

SRAM

these

transitions

to and from the external power source are

transparent

to

the SRAM, making it a true nonvolatile memory

this unique construction combines the strategic

advantages

of SRAM–

addressing structure, high–speed access, and timing requirements – with the
nonvolatility advantages of EEPROM technologies

Battery–backed SRAM modules from Dallas Semiconductor are

pin

–

compatible

with non–battery–backed SRAMs, making them ideal for any

application where a traditional SRAM would be suitable

SRAM

Single Access Read Cycle

t

RC

t

RC

Read Cycle Time

t

AA

Address Access Time

t

OH

Output

Hold from Address Change

t

OH

t

AA

Data Valid

Previous Data Valid

Data Out

Address

???

SRAM

K6R1008V1D (1/3)

K6R1008V1D.
1Mbit Asynchronous Fast SRAM
High-Speed CMOS Static RAM.
Samsung Electronics June 2003

A0 - A16

Address Inputs

WE

Write Enable

CS

Chip Select

OE

Output Enable

I/O1 ~ I/O8

Data Inputs/Outputs

VCC

Power(+3.3V)

VSS

Ground

CS WE OE Mode

I/O Pin Supply Current

H

X

X* Not Select

High-Z ISB, ISB1

L

H H Output Disable High-Z ICC

L

H

L

Read

DOUT ICC

L

L

X

Write

DIN

ICC

6

SRAM - READ

K6R1008V1D-08 (2/3)

Read Cycle Time

t

RC

8 ns

MIN

Address Access Time

t

AA

8 ns

MAX

Chip Select to Output

t

CO

8 ns

MAX

Output Enable to Valid Output

t

OE

4 ns

MAX

Output Hold from Address Change

t

OH

3 ns

MIN

Chip Selection to Power Up Time

t

PU

0 ns

MIN

Chip Selection to Power DownTime

t

PD

8 ns

MAX

K6R1008V1D. 1Mbit Asynchronous Fast SRAM High-Speed CMOS Static RAM.

Samsung Electronics June 2003

SRAM - Write

K6R1008V1D-08 (3/3)

Write Cycle Time

t

WC

8 ns

MIN

Chip Select to End of Write

t

CW

6 ns

MIN

Address Set-up Time

t

AS

0 ns

MIN

Address Valid to End of Write

t

AW

6 ns

MIN

Write Pulse Width(OE High)

t

WP

6 ns

MIN

End of Write to Output Low-Z

t

OW

3 ns

MIN

(OE= Clock)

(OE=Low Fixed)

(CS = Controlled)

K6R1008V1D. 1Mbit Asynchronous Fast SRAM High-Speed CMOS Static RAM.

Samsung Electronics June 2003

Memory

&

&

&

&

Memory

Dynamic

K6R1008V1D-08

K6F1008V2C-55

Read Cycle Time

t

RC

8 ns

MIN

55 ns

MIN

Address Access Time

t

AA

8 ns

MAX

55 ns

MAX

Chip Select to Output

t

CO

8 ns

MAX

55 ns

MAX

Output Enable to Valid Output

t

OE

4 ns

MAX

25 ns

MAX

Output Hold from Address Change

t

OH

3 ns

MIN

10 ns

MIN

Write Cycle Time

t

WC

8 ns

MIN

55 ns

MIN

Chip Select to End of Write

t

CW

6 ns

MIN

45 ns

MIN

Address Set-up Time

t

AS

0 ns

MIN

0 ns

MIN

Address Valid to End of Write

t

AW

6 ns

MIN

45 ns

MIN

Write Pulse Width(OE High)

t

WP

6 ns

MIN

40 ns

MIN

End of Write to Output Low-Z

t

OW

3 ns

MIN

5 ns

MIN

K6R1008V1D. 1Mbit Asynchronous Fast SRAM High-Speed CMOS Static RAM.
Samsung Electronics June 2003

K6F1008V2C. 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM.

Samsung Electronics, March 2005

F

A

ST

SL

O

W

Memory

&

&

&

&

Memory

Static

Parameter Symbol

K6R1008V1D-08

K6F1008V2C-55

Operating

I

CC2

90 mA

35 mA

MAX

TTL

Current

I

CC1

3 mA

MAX

CMOS

Standby

I

SB

20 mA

TTL

Current

I

SB1

5 mA

5

µ

A

MAX

CMOS

Input/Output Capacitance

C

I/O

8 pF

MAX

10 pF

MAX

Input Capacitance

C

IN

6 pF

MAX

8 pF

MAX

CS=1

CS=0

K6R1008V1D. 1Mbit Asynchronous Fast SRAM High-Speed CMOS Static RAM.
Samsung Electronics June 2003

K6F1008V2C. 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM.

Samsung Electronics, March 2005

F

A

ST

SL

O

W

DRAM

(

D

ynamic

R

andom

A

ccess

M

emory)

in an

SRAM

, this information is stored in a

four to six transistor flip–

flop

which is easy to address, but requires a relatively large memory

cell

DRAM

, by comparison, stores its 1 or 0 as a charge on a

small

capacitor

, requir ing much more current then an SRAM to maintain the

stored data

net

memory cell size

is

smaller

for the

DRAM

than for the SRAM, so

the total cost per bit of memory is less

DRAM’s capacitors must be

constantly

refreshed

so that they retain

their charge

DRAMs require more sophisticated interface circuitry

SRAM / DRAM Cell

bit = 1

bit = 0

Select = 1

On

Off

Off

On

N1

N2

P1

P2

On

On

Word Line

Bit

Line

Storage
element
(capacitor)

Switching

element

SRAM Cell

DRAM Cell

C = 0,020 – 0,040 pF

C

Sense
Amplifier

7

DRAM Architecture

Word Line

Bit

Line

Storage

element

(capacitor)

Switching

element

DRAM Cell

Memory

Array

.. Bit Lines ..

..

W

o

rd

L

in

e

s

.

.

R

o

w

D

e

c

o

d

e

r

Column Decoder

Data In/Out

Buffers

Sense Amps

RAS CAS

R/W

OE

Addr

Data

RAS – Row Access Select
CAS – Column Access Select

R/W – Read / Write
OE – Output Enable
CS – Chip Select

CS

DRAM

Memory Circuits

Memory Controller

include a series of tasks that include identifying the type,

speed and amount of memory and checking for errors

memory cells

have a whole support infrastructure of other specialized circuits

to perform functions:

–

address logic to select rows and columns

:

RAS

(Row Address Select) and

CAS

(Column Address Select)

–

internal

Refresh Counters

or registers to keep track of the refresh

sequence, or to initiate refresh cycles as needed

–

Sense Amplifier

to amplify the signal or charge detected on a memory

cell

–

WE

(Write Enable) telling a cell whether it should take a charge or not

–

OE

(Output Enable) logic to prevent data from appearing at the outputs

unless specifically desired.

Understanding DRAM Operation.

Applications Note. IBM, December 1996

DRAM

Refresh

milliseconds

a full bucket becomes

empty

CPU

or the

memory controller

has to come along and

recharge all

of the

capacitors holding

a

1

before they discharge – to do this, the memory

controller reads the memory and then writes it right back

refresh operation

happens automatically thousands of times per second

http://computer.howstuffworks.com/ram.htm

capacitor

is like a small bucket that is

able to store electrons

to

store

a

1

in the memory cell, the

bucket is

filled with electrons

to

store

a

0

, it is

emptied

problem with the

capacitor's

bucket is

that it has a

leak

, in a matter of a

few

Refresh

DRAM

Refresh

each cell unit consisting of a transistor and a very small

capacitor

of about

20-40 fF

(Femtofarad, 0.020-0.040 pF) - a charged capacitor has a logical 1,

a discharged capacitor a logical 0

DRAM

must

refresh

the row each time the spec t

REF

is elapsed

Micron Technology:

refresh period t

REF

= 32 / 64 ms (2,048 / 4,096 cycles)

Samsung Electronics (

Auto refresh

)

:

refresh period t

REF

= 64 ms (4K cycles)

3

different

refresh modes

are available:

RAS only Refresh, Hidden Refresh, CAS before RAS Refresh

Robert Hoffmann: Engineer To Engineer. Note EE-126.

European DSP Applications. Analog Devices, Rev1 (20-March-02)

TN-04-30. VARIOUS METHODS OF DRAM REFRESH

Micron Technology, Rev. 2/1999

AN987. DRAM Refresh Modes.

Motorola Semiconductors. REV 1. February 1994

MT4LC4M4E8, MT4LC4M4E9. 4 MEG x 4 EDO DRAM

.

Micron Technology Rev. 6/1998

K4S64xx32N Synchronous DRAM. 2M x 8Bit x 4Banks / 1M x 16Bit x

4Banks SDRAM

.

Samsung Electronics, Rev. 1.12 August 2008

DRAM

- timing

Engineer To Engineer. Note EE-126 Contributed by Robert Hoffmann,
European DSP Applications. Analog Devices, Rev1 (20-March-02)

1. Activation:
–

bias the row’s bit lines

–

sense the word lines’
capacitor cells

–

store sensed value
statically

2. Access Column:
–

select bit lines

–

WR: write to sense amp

–

RD: read stored value

3. Precharge:
–

write stored value back to
the cell

–

deselect row and columns

t

RC

t

RAS

t

RP

t

CAS

t

RCD

t

WCS

t

WCH

t

CAC

t

ARS

t

ARH

~RAS

~CAS

~WE

~OE

Address

Data

D

Q

Col

Row

Row

t

ACS

t

ACH

Col

Idle state

What does 4-3-3 SDRAM mean

t

RP

= 20 ns

t

CAS

~RAS

~CAS

~WE

~OE

Address

Data

D

Col

Row

Row

Col

Idle state

Q

t

RAS

4

–

3

–

3

t

RAC

t

CAC

= 25 ns

t

RCD

= 20 ns

t

CLK

= 7,5 ns (133 MHz Bus)

t

RCD

/ t

CLK

= 2,67

→

→

→

→

3

t

RP

/ t

CLK

= 2,67

→

→

→

→

3

CL = t

CAC

/ t

CLK

= 3,33

→

→

→

→

4

CL is CAS Latency

8

What does 2-3-3-6-1T DRAM mean

t

RP

= 20 ns

t

CAS

~RAS

~CAS

~WE

~OE

Address

Data

D

Col

Row

Row

Col

Idle state

Q

t

RAS

= 40 ns

t

RAC

t

CAC

= 15 ns

t

RCD

= 20 ns

t

CLK

= 7,5 ns (133 MHz Bus)

t

RCD

/ t

CLK

= 2,67

→

→

→

→

3

t

RP

/ t

CLK

= 2,67

→

→

→

→

3

CL = t

CAC

/ t

CLK

= 2

→

→

→

→

2

CL is CAS Latency

2

–

3

–

3

–

6

t

RAS

/ t

CLK

= 5,33

→

→

→

→

6

Bank cycle time

FRAM Operation

ferroelectric crystal has a mobile atom in the center of the crystal

,

applying an electric field across a face of the crystal causes this atom to move
in the direction of the field

reversing

the

field

causes the

atom to move

in the

opposite direction

atom positions at the top and bottom of the crystal are stable

removing

the

electric field

leaves

the

atom in a

stable position

, even in the

absence of power

as a memory element, the
ferroelectric crystal creates
an

ideal digital memory

- it

contains two stable data
states, it requires very little
time and energy to change
states, and is very stable
over a variety of
environmental conditions

FRAM

Sun S. Sommervold B. Culbreth T. Davenport T: Data Retention Performance of 0.5

µ

m

FRAM Products. Technical paper, Ramtron, Apr. 2006

Advantages of the FRAM Memory

AN-200. Advantages of the FM24C16 Serial 16Kb FRAM Memory.

Ramtron, Jan. 1999