Semiconductor Group

1

NPN Silicon AF Transistors

BC 635

… BC 639

5.91

Type

Ordering Code

Marking

Package

1)

Pin Configuration

BC 635
BC 637
BC 639

Q68000-A3360
Q68000-A2285
Q68000-A3361

–

TO-92

E

C

B

1

2

3

If desired, selected transistors, type BC 63

★

–10 (

h

FE

= 63 … 160), or BC 63

★

–16

(

h

FE

= 100 … 250) are available. Ordering codes upon request.

1)

For detailed information see chapter Package Outlines.

●

High current gain

●

High collector current

●

Low collector-emitter saturation voltage

●

Complementary types: BC 636, BC 638,

BC 640 (PNP)

1

2

3

Semiconductor Group

2

BC 635

… BC 639

Maximum Ratings

Parameter

Values

Unit

Collector-emitter voltage

V

Peak collector current

Collector current

A

Junction temperature

˚C

Total power dissipation,

T

C

= 90 ˚C

1)

W

Storage temperature range

Collector-base voltage

Thermal Resistance

Junction - ambient

1)

≤

156

K/W

60

1

1.5

0.8 (1)

150

– 65 … + 150

Emitter-base voltage

Base current

mA

100

Junction - case

2)

≤

75

45

80

60

45

100

BC 637

BC 635

BC 639

5

Peak base current

200

Symbol

V

CE0

I

CM

I

C

T

j

P

tot

T

stg

V

CB0

R

th JA

V

EB0

I

B

R

th JC

I

BM

1)

If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm

×

10 mm large copper area

for the collector terminal,

R

th JA

= 125 K/W and thus

P

tot max

= 1 W at

T

A

= 25 ˚C.

2)

Mounted on Al heat sink 15 mm

×

25 mm

×

0.5 mm.

Semiconductor Group

3

BC 635

… BC 639

Electrical Characteristics
at

T

A

= 25 ˚C, unless otherwise specified.

DC current gain

I

C

= 5 mA;

V

CE

= 2 V

I

C

= 150 mA;

V

CE

= 2 V

1)

I

C

= 500 mA;

V

CE

= 2 V

1)

V

Collector-emitter breakdown voltage

I

C

= 10 mA

BC 635
BC 637
BC 639

V

(BR)CE0

45
60
80

–
–
–

–
–
–

nA

µ

A

Collector cutoff current

V

CB

= 30 V

V

CB

= 30 V,

T

A

= 150 ˚C

I

CB0

–
–

–
–

100
20

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

I

C

= 100

µ

A

BC 635
BC 637
BC 639

V

(BR)CB0

45
60
100

–
–
–

–
–
–

Emitter-base breakdown voltage

I

E

= 10

µ

A

V

(BR)EB0

5

–

–

mV

Collector-emitter saturation voltage

1)

I

C

= 500 mA;

I

B

= 50 mA

V

CEsat

–

–

500

–

h

FE

25
40
25

–
–
–

–
250
–

V

Base-emitter voltage

1)

I

C

= 500 mA;

V

CE

= 2 V

V

BE)

–

–

1

nA

Emitter cutoff current

V

EB

= 4 V

I

EB0

–

–

100

AC characteristics

MHz

Transition frequency

I

C

= 50 mA,

V

CE

= 10 V,

f

= 20 MHz

f

T

–

100

–

1)

Pulse test:

t

≤

300

µ

s,

D

≤

2 %.

Semiconductor Group

4

BC 635

… BC 639

Total power dissipation

P

tot

=

f

(

T

A

;

T

C

)

Permissible pulse load

R

thJA

=

f

(

t

p

)

V

CE

= 2 V

Collector cutoff current

I

CB0

=

f

(

T

A

)

V

CB

= 30 V

Collector current

I

C

=

f

(

V

BE

)

Semiconductor Group

5

BC 635

… BC 639

DC current gain

h

FE

=

f

(

I

C

)

V

CE

= 2 V

Transition frequency

f

T

=

f

(

I

C

)

V

CE

= 10 V,

f

= 20 MHz

Collector-emitter saturation voltage

V

CEsat

=

f

(

I

C

)

h

FE

= 10

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Datasheets for electronics components.