Laboratorium Elektroniki cz I 2

260

BF 519, n-p-n, Si, epiplanarny, w.cz., średnia moc

Parametr		min	typ	max	Uwagi: ta = 25°C
P max	mW			300	Podobne: KT312.BF520, BF521
U ma*	mA			50
Ib rruuc	mA			5
UcEOma*	V			50
Uc80max	V			70
UgBOmax	V			5
UcEO (BR)	V	50			Iceo =10 mA
UcBO(BR)	V	70			Icso = 10 jiA
UebO (BR)	V	5	8.5		Iebo = 10 pA
UcE sal	V		0.1	0.5	lc = 20 mA, lB = 2 mA
UfiEsat	V		0.8	1.0	lc = 20 mA, lB = 2 mA
h2,E (II) (III) (V) (VI)		20		35	lc= 10 mA UCE = 6 V
		30		90
		70		170
		150
h2ia		20	75	200	lc= 10 mA, UCe = 6 V
hiie	kfl		0.8		lc = 2 mA Uce = 5 V fp = 1 kHz
hi2e	itr*		0.6
h2io		50
h22e	pS	6
fT	MHz	150	270		lc = 5mA, UC£ = 10 V
IcBO	pA		2	100	Ucbo = 6 V

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BF 245, Jfet. kanał N, epitaksjalno-planarny "
Parametr		min.	typ	max	Uwagi: t, = 25°C
P max	mW			360
loss	mA	2		25	Uds = 15 V, Uqs ^= 0
lass	nA			-5	Ugs ^= "20, Uds = 0
Ugss	V	-30			Ig = "1 nA, Uds ^= 0
UoSmsx	V			±30
UoGma*	V			30
Ig max	mA			10
Up /A/ IB/ ICI	V	-0.4		-2.2	Idss=2+6,5 mA, UDS=15 V, lo=200 pA
	V	-1.6		-3.8	Idss=6+15 mA, Uos = 15 V, lD=200 |iA
	V	-3.2		-7.5	Idss=12+25 mA, Uos = 15 V, lo=200 PA
9m	mS	3	5.5	6.5	Uos = 15 V, loss. fp = 1 kHz
9d	pS	70			UDS = 20 V. UGS = -1 V, fp = 100 MHz
g*
SMY 50, MOS FET, Kanał P, wzbogacony, wyprowadzone podłoże
Parametr		min.	typ	max	Uwagi: t, = 25°C
Pma*	mW			225
Idss	pA			-10	UDS = -31 V, UGS = 0, USB = 0
less	PA			-10	Uds = 0, UQS = -31 V, US8 = 0
^DS max	V	+0.3		-31
UGSmax	V	+0.3		-31
UoG max	V	+31		-31
UGB ma*	V	+0.3		-31
UoBmaa	V	+0.3		-31
I-I SB ma*	V	+0.3		-15
Id max	mA			-25
Ig max	mA			0.1
Ugsaw	V	3			lD = 10 pA, Uos = Ugs, Ubs = 0
^rOS/OMf	n			150	|0= 100 pA, Uqs = -20 V
9m	mS			3.6	Uos = UGS = -10 V, (p = 1 kHz