Laboratorium Elektroniki cz I 2

260

BF 519, n-p-n, Si, epiplanarny, w.cz., średnia moc

Parametr		min	typ	max	Uwagi: ta = 25°C
Pmax	mW			300	Podobne: KT312.BF520, BF521
U max	mA			50
Ib max	mA			5
U CEO max	V			50
UcBOmax	V			70
UebO max	V			5
UcEO (BR)	V	50			Iceo =10 mA
UcBO (BR)	V	70			Icbo =10 |iA
UeBO (BR)	V	5	8.5		Iebo =10 pA
UcE sal	V		0.1	0.5	lc = 20 mA, lB = 2 mA
U BE sal	V		0.8	1.0	lc = 20 mA, lB = 2 mA
h21E (ID (III) (V) (VI)		20		35	lc = 10 mA Uce = 6 V
		30		90
		70		170
		150
^21 a		20	75	200	lc= 10 mA, UCE = 6 V
hiie	kn		0.8		lc = 2 mA UCE = 5 V fp = 1 kHz
hi2e	10*^4		0.6
h21e		50
^22e	M-S	6
fT	MHz	150	270		lc = 5 mA, Uce = 10 V
IcBO	mA		2	100	Ucbo = 6 V

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BF 245, Jfet. kanał N, epitaksjalno-planamy

Parametr		min.	typ	max	Uwagi: ta = 25°C
D ^r max	mW			360
Idss	mA	2		25	UDS = 15 V, Uqs = 0
Igss	nA			-5	Ugs = "20, Uqs = 0
Ugss	V	-30			Ig = -1 pA, U os = 0
Uqs max	V			±30
UoGmax	V			30
Ig max	mA			10
Up IM	V	-0.4		-2.2	Idss=2-6,5 mA, Uos=15 V, Iq=200 pA
/BI	V	-1.6		-3.8	loss=6+15 mA, UDS = 15 V, lD=200 pA
ICI	V	-3.2		-7.5	Idss= 12-25 mA, Uo$ = 15 V, Iq=200 pA
9 m	mS	3	5.5	6.5	Uds = 15 V, Idss. fp = 1 kHz
9d	MS	70			UDS = 20 V, Ugs = -1 V, fp = 100 MHz
9ds
SMY 50, MOS FET, Kanał P, wzbogacony, wyprowadzone podłoże
Parametr		min.	typ	max	Uwagi: t, = 25°C
P max	mW			225
Idss	rA			-10	UDS = -31 V. UGS = 0, USB = 0
Igss	hA			-10	UDS = 0, UQS = -31 V, US0 = 0
UoSmax	V	+0.3 .		-31
U GS max	V	+0.3		-31
UDGmax	V	+31		-31
UGBmax	V	+0.3		-31
UDBmax	V	+0.3		-31
U SB max	V	+0.3		-15
lomax	mA			-25
Ig max	mA			0.1
UcSAh/	V	3			lD = 10 pA, Uos = Uqs. Ubs = 0
^rDS/ON/	n			150	Id=100hA, Ugs = '20 V
9m	mS			3.6	Uos = UGs = -10 V, fp = 1 kHz