SUP/SUB65P06-20

Vishay Siliconix

Document Number: 70289
S-05111—Rev. C, 10-Dec-01

www.vishay.com

2-1

P-Channel 60-V (D-S), 175

_

C MOSFET

PRODUCT SUMMARY

V

(BR)DSS

(V)

r

DS(on)

(

)

I

D

(A)

–60

0.020

–65

a

SUP65P06-20

SUB65P06-20

DRAIN connected to TAB

S

G

D

P-Channel MOSFET

TO-220AB

Top View

G D S

TO-263

S

G

Top View

D

ABSOLUTE MAXIMUM RATINGS (T

C

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

V

GS

"

20

V

Continuous Drain Current

T

C

= 25

_

C

–65

a

Continuous Drain Current
(T

J

= 175

_

C)

T

C

= 125

_

C

I

D

–39

Pulsed Drain Current

I

DM

–200

A

Avalanche Current

I

AR

–60

Repetitive Avalanche Energy

b

L = 0.1 mH

E

AR

180

mJ

T

C

= 25

_

C (TO-220AB and TO-263)

250

d

Power Dissipation

T

A

= 125

_

C (TO-263)

c

P

D

3.7

W

Operating Junction and Storage Temperature Range

T

J

, T

stg

–55 to 175

_

C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

c

R

thJA

40

Junction-to-Ambient

Free Air (TO-220AB)

R

thJA

62.5

_

C/W

Junction-to-Case

R

thJC

0.6

Notes:
a.

Package limited.

b.

Duty cycle

v

1%.

c.

When mounted on 1” square PCB (FR-4 material).

d.

See SOA curve for voltage derating.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

SUP/SUB65P06-20

Vishay Siliconix

www.vishay.com

S

FaxBack 408-970-5600

2-2

Document Number: 70289

S-05111—Rev. C, 10-Dec-01

SPECIFICATIONS (T

J

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= –250

A

–60

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= –250

A

–2.0

–3.0

–4.0

V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

=

"

20 V

"

100

nA

V

DS

= –60 V, V

GS

= 0 V

–1

Zero Gate Voltage Drain Current

I

DSS

V

DS

= –60 V, V

GS

= 0 V, T

J

= 125

_

C

–50

DSS

V

DS

= –60 V, V

GS

= 0 V, T

J

= 175

_

C

–150

On-State Drain Current

a

I

D(on)

V

DS

= –5 V, V

GS

= –10 V

–120

A

V

GS

= –10 V, I

D

= –30 A

0.017

0.020

Drain-Source On-State Resistance

a

r

DS(on)

V

GS

= –10 V, I

D

= –30 A, T

J

= 125

_

C

0.033

DS(on)

V

GS

= –10 V, I

D

= –30 A, T

J

= 175

_

C

0.042

Forward Transconductance

a

g

fs

V

DS

= –15 V, I

D

= –30 A

25

S

Dynamic

b

Input Capacitance

C

iss

4500

Output Capacitance

C

oss

V

GS

= 0 V, V

DS

= –25 V, f = 1 MHz

870

pF

Reversen Transfer Capacitance

C

rss

350

Total Gate Charge

c

Q

g

85

120

Gate-Source Charge

c

Q

gs

V

DS

= –30 V,

V

GS

= –10 V, I

D

= –65 A

24

nC

Gate-Drain Charge

c

Q

gd

DS

GS

D

22

Turn-On Delay Time

c

t

d(on)

15

40

Rise Time

c

t

r

V

DD

= –30 V, R

L

= 0.47

40

80

Turn-Off Delay Time

c

t

d(off)

V

DD

= –30 V, R

L

= 0.47

I

D

]

–65 A, V

GEN

= –10 V, R

G

= 2.5

65

120

ns

Fall Time

c

t

f

D

GEN

G

30

60

Source-Drain Diode Ratings and Characteristics (T

C

= 25

_

C)

b

Continuous Current

I

s

–65

Pulsed Current

I

SM

–200

A

Forward Voltage

a

V

SD

I

F

= –65 A, V

GS

= 0 V

–1.1

–1.4

V

Reverse Recovery Time

t

rr

70

120

ns

Peak Reverse Recovery Current

I

RM(REC)

I

F

= –65 A, di/dt = 100 A/

s

7

9

A

Reverse Recovery Charge

Q

rr

F

0.245

0.54

C

Notes:
a.

Pulse test; pulse width

v

300

s, duty cycle

v

2%.

b.

Guaranteed by design, not subject to production testing

d.

Independent of operating temperature.

SUP/SUB65P06-20

Vishay Siliconix

Document Number: 70289
S-05111—Rev. C, 10-Dec-01

www.vishay.com

2-3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0

25

50

75

100

125

150

175

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0

20

40

60

80

100

0

1000

2000

3000

4000

5000

6000

0

10

20

30

40

50

60

0

20

40

60

80

100

0

20

40

60

80

100

0

40

80

120

160

200

0

2

4

6

8

10

0

40

80

120

160

200

0

2

4

6

8

10

Output Characteristics

Transfer Characteristics

Capacitance

Gate Charge

Transconductance

On-Resistance vs. Drain Current

V

DS

– Drain-to-Source Voltage (V)

–

Drain Current (A)

I

D

V

GS

– Gate-to-Source Voltage (V)

–

Drain Current (A)

I

D

–

Gate-to-Source V

oltage (V)

–

On-Resistance (

Q

g

– Total Gate Charge (nC)

I

D

– Drain Current (A)

V

DS

– Drain-to-Source Voltage (V)

C

–

Capacitance (pF)

r DS(on)

)

V

GS

V

GS

– Gate-to-Source Voltage (V)

–

T

ransconductance

(S)

g

fs

25

_

C

125

_

C

6 V

T

C

= –55

_

C

V

DS

= 30 V

I

D

= 65 A

V

GS

= 10, 9, 8 V

7 V

V

GS

= 10 V

V

GS

= 20 V

C

iss

C

oss

C

rss

T

C

= –55

_

C

25

_

C

125

_

C

5 V

4 V

SUP/SUB65P06-20

Vishay Siliconix

www.vishay.com

S

FaxBack 408-970-5600

2-4

Document Number: 70289

S-05111—Rev. C, 10-Dec-01

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

–50

–25

0

25

50

75

100

125

150

175

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

(Normalized)

–

On-Resistance (

T

J

– Junction Temperature (

_

C)

V

SD

– Source-to-Drain Voltage (V)

r DS(on)

)

–

Source Current (A)

I

S

100

10

1

0.3

0.6

0.9

1.2

1.5

V

GS

= 10 V

I

D

= 30 A

T

J

= 25

_

C

T

J

= 150

_

C

0.3

THERMAL RATINGS

0

20

40

60

80

0

25

50

75

100

125

150

175

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

10

–5

10

–4

10

–3

10

–2

10

–1

1

Normalized Ef

fective

T

ransient

Thermal Impedance

3

Safe Operating Area

Maximum Avalanche and Drain Current

vs. Case Temperature

T

C

– Case Temperature (

_

C)

V

DS

– Drain-to-Source Voltage (V)

–

Drain Current (A)

ID

–

Drain Current (A)

ID

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

100

500

10

0.1

10

s

100

s

1 ms

10 ms

100 ms
dc

T

C

= 25

_

C

Single Pulse

Limited by r

DS(on)

0.1

1

10

100

1

Document Number: 91000

www.vishay.com

Revision: 18-Jul-08

1

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Vishay

All product specifications and data are subject to change without notice.

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therein, which apply to these products.

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