Dated : 22/07/2004

®

SEMTECH ELECTRONICS LTD.

(

Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724

)

ST 2SC945

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into five groups, R, O, Y,

P and L, according to its DC current gain. As

complementary type the PNP transistor ST 2SA733

is recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T

a

= 25℃)

Symbol

Value

Unit

Collector Base Voltage

V

CBO

60 V

Collector Emitter Voltage

V

CEO

50 V

Emitter Base Voltage

V

EBO

5 V

Collector Current

I

C

150

mA

Power Dissipation

P

tot

250 mW

Junction Temperature

T

j

150

O

C

Storage Temperature Range

T

S

-55 to +150

O

C

Dated : 22/07/2004

®

SEMTECH ELECTRONICS LTD.

(

Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724

)

ST 2SC945

Characteristics at T

amb

=25

O

C

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V

CE

=6V, I

C

=1mA

Current Gain Group R

O

Y

P

L

h

FE

h

FE

h

FE

h

FE

h

FE

40

70

120

200

350

-

-

-

-

-

80

140

240

400

700

-

-

-

-

-

Collector Base Breakdown Voltage

at I

C

=100

μA

V

(BR)CBO

60

-

-

V

Collector Emitter Breakdown Voltage

at I

C

=10mA

V

(BR)CEO

50

-

-

V

Emitter Base Breakdown Voltage

at I

E

=10

μA

V

(BR)EBO

5

-

-

V

Collector Cutoff Current

at V

CB

=40V

I

CBO

- - 0.1

μA

Emitter Cutoff Current

at V

EB

=3V

I

EBO

- - 0.1

μA

Collector Saturation Voltage

at I

C

=100mA, I

B

=10mA

V

CE(sat)

- 0.15 0.3 V

Gain Bandwidth Product

at V

CE

=6V, I

C

=10mA

f

T

-

300

-

MHz

Output Capacitance

at V

CB

=6V, f=1MHz

C

OB

- 2.5 - pF

Noise Figure

at V

CE

=6V, I

E

=0.5mA

at f=1KHz, R

S

=500

Ω

NF - 4 - dB

Dated : 22/07/2004

®

SEMTECH ELECTRONICS LTD.

(

Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724

)

ST 2SC945

200

50

Tamb ( C)

P

to

t

(m

W

)

0

50

25

100

150

125

75

100

150

Total power dissipation

vs. ambient temperature

300

250

Free air

Normalized collector cutoff current

vs. ambient temperature

Tamb ( C)

N

o

rm

a

li

z

e

d

c

o

ll

e

c

to

r

c

u

to

ff

c

u

rr

e

n

t

I

C

B

O

(T

a

)

I

C

B

O

(T

a

=

2

5

C

)

0

1

40

20

60

10

100

1000

10000

140

100

80

120

160

Ta=75 C

25 C

-25 C

COLLECTOR CURRENT, mA

0.01

200

D

C

C

U

R

R

E

N

T

G

A

IN

80

40

0

160

120

280

240

320

360

200

D

C

C

U

R

R

E

N

T

G

A

IN

10

1

0.1

COLLECTOR CURRENT, mA

0.1

0.01

100

0.5V

1.0V

2.0V

3.0V

80

40

0

160

120

V

CE

=6.0V

pulse

d

h

FE

- I

C

280

240

360

320

100

1

10

h

FE

- I

C

V

CE

=6V

pulsed

1

V

CE

, V

0.8

20

0

0

0.4

1.6

I

B

=0.1mA

1.2

2.0

2

0

10

0

50

IB=0.5 A

20

30

V

CE

, V

40

Collector current vs.

collector emitter voltage

Collector current vs.

collector emitter voltage

Ic

-

m

A

40

60

100

80

0.5

0.2

0.3

0.4

1.0

0.9

0.6

0.8

0.7

6

4

Ic

-

m

A

10

8

3.5

3

2

2.5

1.5

4.5

4

Dated : 22/07/2004

®

SEMTECH ELECTRONICS LTD.

(

Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724

)

ST 2SC945

0.5

0.1

0.01

0.3

0.2

0.4

0.8

V

BE

, V

0.6

0.7

0.9

1

T

a

=

7

5

C

Collector current vs. base emitter voltage

10

1

Ic

-

m

A

100

V

CE

=6V

pulsed

-2

5

C

2

5

C

20

0.1

VCE(sat)

V

B

E

(s

a

t)

,

V

V

C

E

(s

a

t)

,

V

fT

-

M

H

z

100

6V

0.1

0.01

Collector Current, mA

1

100

10

IC/IB=10

Emitter Current, mA

-0.1

10

-1

-10

1V

2V

-100

1

10

C

ollector and base saturation

voltage vs. collector current

VBE(sat)

pulsed

IC/IB=10

50

20 50

VCE=10V

1000

10000

f

T

- I

E

C

ib

,

C

o

b

-

p

F

0.1

0.1

1

VEB, VCB - V

1

Cob(IE=0)

10

100

10

100

V

EB,

V

CB vs.

Cib, Cob

f=1MHz

Cib(Ic=0)

S

m

a

ll

s

ig

n

a

l

c

u

rr

e

n

t

g

a

in

DC current gain

0

200

400

200

600

400

800

1000

Small signal current gain

vs. DC current gain

800

600

1000

VCE=6V

Ic=1mA

f=1kHz

Normalized h-parameters

vs. collector current

N

o

rm

a

li

z

e

d

h

-p

a

ra

m

e

te

rs

0.1

0.1

1

Hoe

Hfe

Hre

10

Hie

Ic ,

mA

1

10

Hre

Hie

he(Ic)
he(Ic=1mA)

VCE=6V
f=1kHz

He=

Hfe

Hoe

Dated : 22/07/2004

®

SEMTECH ELECTRONICS LTD.

(

Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724

)

ST 2SC945

VCE - V

Normalized h-parameters vs.

collector emitter voltage

hfe - Small signal current gain

Input impedance, voltage feedback

ratio and output admittance vs.

small signal current gain

hoe

-

O

u

tp

u

t

a

d

m

itt

a

n

ce (

s

)

0

20

40

60

80

100

h

re

- Volta

g

e feedb

a

c

k

ra

tio (x

1

0

)

h

ie -

I

n

p

ut

impeda

nce(k

)

0

10

20

30

40

0

200

20

10

40

30

-4

50

50

VCE=6V

Ic=1mA

f=1kHz

400

600

hoe

hre
hie

1000

800

Nor

m

alized h- parame

ters

hoe

0

1

hfe

2

10

hie

hre

3

Ic=1mA

f=1kHz

He=

he(VCE)
he(VCE=6V)

hie

hoe

20

hre

hfe

30