VP2020L, BSS92

Vishay Siliconix

Document Number: 70210
S-04279—Rev. E, 16-Jun-01

www.vishay.com

11-1

P-Channel 200-V (D-S) MOSFETs

PRODUCT SUMMARY

Part Number

V

(BR)DSS

Min (V)

r

DS(on)

Max (

W

)

V

GS(th)

(V)

I

D

(A)

VP2020L

–200

20 @ V

GS

= –4.5 V

–0.8 to –2.5

–0.12

BSS92

–200

20 @ V

GS

= –10 V

–0.8 to –2.8

–0.15

FEATURES

BENEFITS

APPLICATIONS

D

High-Side Switching

D

Secondary Breakdown Free: –220 V

D

Low On-Resistance: 11.5

W

D

Low-Power/Voltage Driven

D

Excellent Thermal Stability

D

Ease in Driving Switches

D

Full-Voltage Operation

D

Low Offset Voltage

D

Easily Driven Without Buffer

D

No High-Temperature
“Run-Away”

D

Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.

D

Power Supply, Converters

D

Motor Control

D

Switches

“S” VP

2020L

xxyy

TO-92-18CD

(TO-18 Lead Form)

Top View

S

G

D

1

2

3

1

TO-226AA

(TO-92)

Top View

S

D

G

2

3

BSS92

VP2020L

Device Marking

Front View

“S” = Siliconix Logo
xxyy = Date Code

“S” = Siliconix Logo
xxyy = Date Code

Device Marking

Front View

“S” BS

S92

xxyy

“S” = Siliconix Logo
xxyy = Date Code

Device Marking

Front View

ABSOLUTE MAXIMUM RATINGS (T

A

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

VP2020L

BSS92

Unit

Drain-Source Voltage

V

DS

–200

–200

Gate-Source Voltage

V

GS

"

20

"

20

V

_

T

A

= 25

_

C

–0.12

–0.15

Continuous Drain Current

(T

J

= 150

_

C)

T

A

= 100

_

C

I

D

–0.08

–0.09

A

Pulsed Drain Current

a

I

DM

–0.48

–0.6

T

A

= 25

_

C

0.8

1.0

Power Dissipation

T

A

= 100

_

C

P

D

0.32

0.4

W

Thermal Resistance, Junction-to-Ambient

R

thJA

156

125

_

C/W

Operating Junction and Storage Temperature Range

T

J

, T

stg

–55 to 150

_

C

Notes
a.

Pulse width limited by maximum junction temperature.

VP2020L, BSS92

Vishay Siliconix

www.vishay.com

11-2

Document Number: 70210

S-04279—Rev. E, 16-Jun-01

SPECIFICATIONS (T

A

= 25_C UNLESS OTHERWISE NOTED)

Limits

VP2020L

BSS92

Parameter

Symbol

Test Conditions

Typ

a

Min

Max

Min

Max

Unit

Static

Drain-Source

V

GS

= 0 V, I

D

= –10

m

A

–220

Drain-Source
Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= –250

m

A

–220

–200

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= –1 mA

–1.9

–0.8

–2.5

–0.8

–2.8

V

DS

= 0 V, V

GS

=

"

20 V

"

10

"

100

Gate-Body Leakage

I

GSS

T

J

= 125

_

C

"

50

nA

V

DS

= 0.8 x V

(BR)DSS

, V

GS

= 0 V

–1

T

J

= 125

_

C

–100

Zero Gate Voltage
Drain Current

I

DSS

V

DS

= –200 V, V

GS

= 0 V

–60

m

A

Drain Current

DSS

T

J

= 125

_

C

–200

m

V

DS

= –60 V, V

GS

= 0 V

–0.2

On-State Drain Current

b

I

D(on)

V

DS

= –10 V, V

GS

= –4.5 V

–250

–100

mA

V

GS

= –10 V, I

D

= –0.1 A

11.5

20

V

GS

= –4.5 V, I

D

= –0.1 A

15

20

Drain-Source
On-Resistance

b

r

DS(on)

T

J

= 125

_

C

28

40

W

On-Resistance

b

DS(on)

V

GS

= –4.5 V, I

D

= –0.05 A

15

T

J

= 125

_

C

28

Forward

V

DS

= –10 V, I

D

= –0.1 A

170

100

Forward
Transconductance

b

g

fs

V

DS

= –25 V, I

D

= –0.1 A

170

60

mS

Diode Forward Voltage

V

SD

I

S

= –0.3 A, V

GS

= 0 V

–0.9

–1.2

V

Dynamic

Input Capacitance

C

iss

30

70

130

Output Capacitance

C

oss

V

DS

= –25 V, V

GS

= 0 V

f = 1 MHz

10

20

30

pF

Reverse Transfer Capacitance

C

rss

f = 1 MHz

3

10

15

Switching

c

t

d(on)

6

10

Turn-On Time

t

r

V

DD

= –25 V, R

L

= 250

W

^

8

15

I

D

^

–0.1 A, V

GEN

= –10 V

W

ns

t

d(off)

D

GEN

R

G

= 25

W

18

30

Turn-Off Time

t

f

R

G

= 25

W

17

25

Notes
a.

For DESIGN AID ONLY, not subject to production testing.

VPDQ20

b.

Pulse test: PW

v

300

m

s duty cycle

v

2%.

c.

Switching time is essentially independent of operating temperature.

VP2020L, BSS92

Vishay Siliconix

Document Number: 70210
S-04279—Rev. E, 16-Jun-01

www.vishay.com

11-3

TYPICAL CHARACTERISTICS (T

A

= 25_C UNLESS OTHERWISE NOTED)

20

0

–4

–8

–12

–16

–20

18

16

14

12

10

8

–100

–80

–60

0

0

–1

–5

–40

–20

–2

–3

–4

–500

0

–1

–2

–3

–4

–5

–400

–300

–200

–100

0

Ohmic Region Characteristics

Output Characteristics for Low Gate Drive

On-Resistance

Normalized On-Resistance

vs. Junction Temperature

Transfer Characteristics

On-Resistance vs. Gate-to-Source Voltage

V

GS

– Gate-Source Voltage (V)

V

GS

– Gate-Source Voltage (V)

V

DS

– Drain-to-Source Voltage (V)

V

DS

– Drain-to-Source Voltage (V)

V

GS

= –10 V

–5 V

–6 V

–55

_

C

T

J

= 125

_

C

V

DS

= –15 V

–0.02 A

I

D

= –0.1 A

T

J

– Junction Temperature (

_

C)

–4.5 V

–4 V

–3 V

–100

0

–0.4

–0.8

–1.2

–1.6

–2.0

–80

–60

–40

–20

0

V

GS

= –4 V

–3.6 V

–3 V

–2 V

V

GS

– Gate-Source Voltage (V)

–0.05 A

25

20

15

0

0

–50

–250

10

5

–100

–150

–200

V

GS

= –4.5 V

–10 V

2.25

2.00

1.75

0.50

–50

–10

150

1.50

1.25

30

70

110

1.00

0.75

V

GS

= –4.5 V

I

D

= –0.1 A

25

_

C

I

D

–

Drain Current (mA)

I

D

–

Drain Current (mA)

I

D

–

Drain Current (mA)

r

DS

(on)

–

On-Resistance (

Ω )

r

DS

(on)

–

Drain-Source On-Resistance (

Ω )

r

DS

(on)

–

Drain-Source On-Resistance (

Ω )

(

Normalized)

VP2020L, BSS92

Vishay Siliconix

www.vishay.com

11-4

Document Number: 70210

S-04279—Rev. E, 16-Jun-01

TYPICAL CHARACTERISTICS (T

A

= 25_C UNLESS OTHERWISE NOTED)

10 K

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

1

0.01

0.1

0.01

0.1

1.0

100

10

1 K

–10

–100

–1000

100

10

1

120

100

80

0

0

–10

–50

60

40

–20

–30

–40

20

Threshold Region

Capacitance

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)

Gate Charge

Load Condition Effects on Switching

Normalized Ef

fective

T

ransient

Thermal Impedance

t

1

– Square Wave Pulse Duration (sec)

I

D

– Drain Current (A)

V

DS

– Drain-to-Source Voltage (V)

V

GS

– Gate-to-Source Voltage (V)

–55

_

C

Q

g

– Total Gate Charge (nC)

C

rss

C

oss

C

iss

V

DD

= –25 V

R

G

= 25

W

V

GS

= 0 to –10 V

t

d(on)

t

d(off)

t

r

t

f

T

J

= 150

_

C

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 156

_

C/W

3. T

JM

– T

A

= P

DM

Z

thJA

(t)

t

1

t

2

t

1

Notes:

P

DM

t

2

–12

–10

–8

0

0

0.5

2.5

–6

–4

1.0

1.5

2.0

–2

I

D

= –0.1 A

V

DS

= –100 V

–160 V

–10.0

–1.0

–0.01

0

–3.5

–0.1

–1.0

–2.0

–3.0

V

DS

= –5 V

125

_

C

25

_

C

V

GS

= 0 V

f = 1 MHz

I

D

–

Drain Current (mA)

C

–

Capacitance (pF)

V

GS

–

Gate-to-Source V

oltage (V)

t

–

Switching T

ime (ns)