BPW96

Vishay Telefunken

1 (6)

Rev. 3, 16-Nov-99

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Document Number 81532

Silicon NPN Phototransistor

Description

BPW96 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1

¾

(ø 5 mm) package. Due to its waterclear epoxy the de-
vice is sensitive to visible and near infrared radiation.
The viewing angle of

±

20

°

makes it insensible to ambi-

ent straylight.

Features

D

Fast response times

D

High photo sensitivity

D

Standard T–1

¾

(ø 5 mm) clear plastic package

D

Angle of half sensitivity

ϕ

=

±

20

°

D

Suitable for visible and near infrared radiation

D

Selected into sensitivity groups

94 8391

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

T

amb

= 25

_

C

Parameter

Test Conditions

Symbol

Value

Unit

Collector Emitter Voltage

V

CEO

70

V

Emitter Collector Voltage

V

ECO

5

V

Collector Current

I

C

50

mA

Peak Collector Current

t

p

/T = 0.5, t

p

x

10 ms

I

CM

100

mA

Total Power Dissipation

T

amb

x

47

°

C

P

tot

150

mW

Junction Temperature

T

j

100

°

C

Storage Temperature Range

T

stg

–55...+100

°

C

Soldering Temperature

t

x

3 s

T

sd

260

°

C

Thermal Resistance Junction/Ambient

R

thJA

350

K/W

BPW96

Vishay Telefunken

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Rev. 3, 16-Nov-99

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Document Number 81532

Basic Characteristics

T

amb

= 25

_

C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Collector Emitter Breakdown
Voltage

I

C

= 1 mA

V

(BR)CE

O

70

V

Collector Dark Current

V

CE

= 20 V, E = 0

I

CEO

1

200

nA

Collector Emitter Capacitance

V

CE

= 5 V, f = 1 MHz, E = 0

C

CEO

3

pF

Angle of Half Sensitivity

ϕ

±

20

deg

Wavelength of Peak Sensitivity

l

p

850

nm

Range of Spectral Bandwidth

l

0.5

620...980

nm

Collector Emitter Saturation
Voltage

E

e

= 1 mW/cm

2

,

l

= 950 nm, I

C

= 0.1 mA

V

CEsat

0.3

V

Turn–On Time

V

S

= 5 V, I

C

= 5 mA,

R

L

= 100

W

t

on

2.0

m

s

Turn–Off Time

V

S

= 5 V, I

C

= 5 mA,

R

L

= 100

W

t

off

2.3

m

s

Cut–Off Frequency

V

S

= 5 V, I

C

= 5 mA,

R

L

= 100

W

f

c

180

kHz

Type Dedicated Characteristics

T

amb

= 25

_

C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Collector Light Current E

e

=1mW/cm

2

,

BPW96A

I

ca

1.5

2.5

4.5

mA

g

e

l

=950nm, V

CE

=5V

BPW96B

I

ca

2.5

4.5

7.5

mA

BPW96C

I

ca

4.5

8

15

mA

Typical Characteristics (T

amb

= 25

_

C unless otherwise specified)

0

20

40

60

80

0

40

80

120

160

200

P

–

T

otal Power Dissipation ( mW

)

tot

T

amb

– Ambient Temperature (

°

C )

100

94 8300

R

thJA

Figure 1. Total Power Dissipation vs.

Ambient Temperature

94 8304

20

I – Collector Dark Current ( nA

)

CEO

100

40

60

80

T

amb

– Ambient Temperature (

°

C )

10

0

10

1

10

2

10

3

10

4

V

CE

=20V

Figure 2. Collector Dark Current vs. Ambient Temperature

BPW96

Vishay Telefunken

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Rev. 3, 16-Nov-99

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Document Number 81532

94 8239

0

0.6

0.8

1.0

1.2

1.4

2.0

I – Relative Collector Current

ca rel

20

40

60

80

T

amb

– Ambient Temperature (

°

C )

100

1.6

1.8

V

CE

=5V

E

e

=1mW/cm

2

l=950nm

Figure 3. Relative Collector Current vs.

Ambient Temperature

0.01

0.1

1

0.01

0.1

1

10

I – Collector Light Current ( mA

)

ca

E

e

– Irradiance ( mW / cm

2

)

10

94 8296

V

CE

=5V

l=950nm

BPW 96 A

BPW 96 B

BPW 96 C

Figure 4. Collector Light Current vs. Irradiance

0.1

1

10

0.1

1

10

I – Collector Light Current ( mA

)

ca

V

CE

– Collector Emitter Voltage ( V )

100

94 8297

E

e

=1 mW/cm

2

0.5 mW/cm

2

0.2 mW/cm

2

0.1 mW/cm

2

0.05 mW/cm

2

l=950nm

BPW 96 B

Figure 5. Collector Light Current vs.

Collector Emitter Voltage

0.1

1

10

0

2

4

6

8

10

V

CE

– Collector Emitter Voltage ( V )

100

94 8301

C – Collector Emitter Capacitance ( pF )

CEO

f=1MHz

Figure 6. Collector Emitter Capacitance vs.

Collector Emitter Voltage

0

2

4

6

12

0

2

8

14

94 8293

t / t –

T

urn on /

T

urn

of

f

T

ime ( s )

of

f

I

C

– Collector Current ( mA )

m

on

6

4

10

8

V

CE

=5V

R

L

=100

W

l=950nm

t

off

t

on

Figure 7. Turn On/Turn Off Time vs. Collector Current

400

600

1000

0

0.2

0.4

0.6

0.8

1.0

S ( ) – Relative Spectral Sensitivity

rel

l – Wavelength ( nm )

94 8348

l

800

Figure 8. Relative Spectral Sensitivity vs. Wavelength

BPW96

Vishay Telefunken

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Rev. 3, 16-Nov-99

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Document Number 81532

0.4

0.2

0

0.2

0.4

S – Relative Sensitivity

rel

0.6

94 8299

0.6

0.9

0.8

0

°

30

°

10

°

20

°

40

°

50

°

60

°

70

°

80

°

0.7

1.0

Figure 9. Relative Radiant Sensitivity vs.

Angular Displacement

BPW96

Vishay Telefunken

5 (6)

Rev. 3, 16-Nov-99

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Document Number 81532

Dimensions in mm

96 12192

BPW96

Vishay Telefunken

6 (6)

Rev. 3, 16-Nov-99

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Document Number 81532

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423