FEATURES

D High-Efficiency PWM Optimized

D 100% R

g

Tested

Si3430DV

Vishay Siliconix

Document Number: 71235

S-31725—Rev. B, 18-Aug-03

www.vishay.com

1

N-Channel 100-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

r

DS(on)

(W)

I

D

(A)

100

0.170 @ V

GS

= 10 V

2.4

100

0.185 @ V

GS

= 6.0 V

2.3

(1, 2, 5, 6) D

(3) G

(4) S

N-Channel MOSFET

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

Ordering Information: Si3430DV-T1

ABSOLUTE MAXIMUM RATINGS (T

A

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

V

DS

100

V

Gate-Source Voltage

V

GS

"20

V

Continuous Drain Current

(T

J

= 175_C)

a

T

A

= 25_C

I

D

2.4

1.8

Continuous Drain Current

(T

J

= 175_C)

a

T

A

= 85_C

I

D

1.7

1.3

A

Pulsed Drain Current

I

DM

8

A

Avalanche Current

L = 0 1 mH

I

AR

6

Repetitive Avalanche Energy (Duty Cycle v1%)

L = 0.1 mH

E

AR

1.8

mJ

Continuous Source Current (Diode Conduction)

a

I

S

1.7

1.0

A

Maximum Power Dissipation

a

T

A

= 25_C

P

D

2.0

1.14

W

Maximum Power Dissipation

a

T

A

= 85_C

P

D

1.0

0.59

W

Operating Junction and Storage Temperature Range

T

J

, T

stg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

M i

J

ti

t A bi t

a

t v 5 sec

R

45

62.5

Maximum Junction-to-Ambient

a

Steady State

R

thJA

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

R

thJF

25

30

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

Si3430DV

Vishay Siliconix

www.vishay.com

2

Document Number: 71235

S-31725—Rev. B, 18-Aug-03

SPECIFICATIONS (T

J

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 mA

2

V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= "20 V

"100

nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 80 V, V

GS

= 0 V

1

mA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 80 V, V

GS

= 0 V, T

J

= 85_C

25

mA

On-State Drain Current

a

I

D(on)

V

DS

w 5 V, V

GS

= 10

V

8

A

Drain-Source On-State Resistance

a

r

DS(on)

V

GS

= 10

V, I

D

= 2.4 A

0.148

0.170

W

Drain-Source On-State Resistance

a

r

DS(on)

V

GS

= 6.0 V, I

D

= 2.3 A

0.160

0.185

W

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 2.4 A

7

S

Diode Forward Voltage

a

V

SD

I

S

= 1.7 A, V

GS

= 0 V

0.8

1.2

V

Dynamic

b

Total Gate Charge

Q

g

5.5

6.6

Gate-Source Charge

Q

gs

V

DS

= 50 V,

V

GS

= 10 V, I

D

= 2.4 A

1.5

nC

Gate-Drain Charge

Q

gd

1.4

Gate Resistance

R

g

1

4

W

Turn-On Delay Time

t

d(on)

9

20

Rise Time

t

r

V

DD

= 50 V, R

L

= 50 W

11

20

ns

Turn-Off Delay Time

t

d(off)

V

DD

= 50 V, R

L

= 50 W

I

D

^ 1 A, V

GEN

= 10 V, R

G

= 6 W

16

30

ns

Fall Time

t

f

9

20

Gate Resistance

R

g

V

GS

= 0.1 V, f = 5 MHz

2.8

W

Source-Drain Reverse Recovery Time

t

rr

I

F

= 1.7 A, di/dt = 100 A/ms

50

80

ns

Notes

a.

Pulse test; pulse width v

300 ms, duty cycle v

2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

2

4

6

8

0

1

2

3

4

5

6

0

2

4

6

8

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

GS

= 10 thru 6 V

T

C

= 125_C

-55_C

4 V

25_C

Output Characteristics

Transfer Characteristics

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)
I

D

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)
I

D

5 V

Si3430DV

Vishay Siliconix

Document Number: 71235

S-31725—Rev. B, 18-Aug-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

- On-Resistance (

r

DS(on)

W

)

0

100

200

300

400

500

0

10

20

30

40

50

60

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50

-25

0

25

50

75

100

125

150

0

2

4

6

8

10

0

1

2

3

4

5

6

0.00

0.05

0.10

0.15

0.20

0.25

0

2

4

6

8

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

V

DS

= 50 V

I

D

= 2.4 A

I

D

- Drain Current (A)

V

GS

= 10 V

I

D

= 2.4 A

V

GS

= 10 V

V

GS

= 6.0 V

Gate Charge

On-Resistance vs. Drain Current

- Gate-to-Source V

oltage (V)

Q

g

- Total Gate Charge (nC)

C

- Capacitance (pF)

V

GS

Capacitance

On-Resistance vs. Junction Temperature

T

J

- Junction Temperature (_C)

(Normalized)

- On-Resistance (

r

DS(on)

W

)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.1

0.2

0.3

0.4

0

2

4

6

8

10

T

J

= 150_C

T

J

= 25_C

I

D

= 2.4 A

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

- On-Resistance (

r

DS(on)

W

)

V

SD

- Source-to-Drain Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

- Source Current (A)
I

S

Si3430DV

Vishay Siliconix

www.vishay.com

4

Document Number: 71235

S-31725—Rev. B, 18-Aug-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

15

30

5

10

Power (W)

Single Pulse Power

Time (sec)

10

-3

10

-2

1

10

600

10

-1

10

-4

100

-1.0

-0.8

-0.6

-0.4

-0.2

-0.0

0.2

0.4

0.6

-50

-25

0

25

50

75

100

125

150

I

D

= 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

Variance (V)

V

GS(th)

T

J

- Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

Normalized Ef

fective

Transient

Thermal Impedance

1. Duty Cycle, D =
2. Per Unit Base = R

thJA

= 90_C/W

3. T

JM

- T

A

= P

DM

Z

thJA(t)

t

1

t

2

t

1

t

2

Notes:

4. Surface Mounted

P

DM

10

-3

10

-2

1

10

10

-1

10

-4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

Square Wave Pulse Duration (sec)

Normalized Ef

fective

Transient

Thermal Impedance

1

600

10

20

0.1

0.01

100

25